Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy

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In order to improve the uniformity of InGaAs lateral islands on Si grown by micro-channel selective area growth, we have investigated the dependences of initial InAs nucleation on the partial pressures of trimethylindium ($P_{\text{TMIn}}$) and tertiary butylarsine ($P_{\text{TBAs}}$) using the in situ monitoring of surface reflectivity. The high $P_{\text{TMIn}}$ resulted in a short incubation period, a high density of nuclei, and vertical growth, suggesting that a high $P_{\text{TMIn}}$ is suitable for obtaining single nuclei in each growth area, which is vital for the growth of single-domain crystals on Si. Laterally grown InAs nuclei, which are preferable for the lateral growth of InGaAs crystals that succeeds the initial nucleation of InAs, were obtained using either a low $P_{\text{TMIn}}$ or a high $P_{\text{TBAs}}$, however, the effect of the latter was not significant. $P_{\text{TBAs}}$ did not affect the incubation period. The density, uniformity, and shape of InAs nuclei can be controlled effectively by adjusting $P_{\text{TMIn}}$, but the uniformity and lateral shape could not be obtained simultaneously. We, therefore, devised a flow-modulated sequence and obtained InAs islands that grew in the lateral direction and almost filled the growth area with a single-crystal domain.
2010-12-25