Characterization of Ni--GaSb Alloys Formed by Direct Reaction of Ni with GaSb
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概要
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We report that direct reaction of Ni with GaSb can provide a Ni--GaSb alloy, which is a suitable metal for source/drain in metal source/drain GaSb p-metal oxide semiconductor field-effect transistors (PMOSFETs). The Ni--GaSb/GaSb contact has a large electron Schottky barrier height (SBH), {\sim}0.5 eV, and low hole SBH, {\sim}0.2 eV, enabling us to realize a high on/off-current ratio in PMOSFETs. We show that low sheet resistance of 7 \Omega/\square and low resistivity of 1.47\times 10^{-5} \Omega cm can be obtained for Ni--GaSb formed by annealing. Ni can also be etched selectively against the Ni--GaSb alloys, which allows us to employ a self-aligned source/drain formation process.
- 2012-07-25
著者
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Takenaka Mitsuru
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Yokoyama Masafumi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Takagi Shinichi
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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KIM Sang-Hyeon
Department of Electrical Engineering and Information Systems, The University of Tokyo
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Zota Cezar
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Kim Sang-Hyeon
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Yokoyama Masafumi
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
-
Takenaka Mitsuru
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
-
Takagi Shinichi
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Zota Cezar
Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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