Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal--Organic Source

スポンサーリンク

概要

• 論文の詳細を見る

• The gas phase doping of arsenic (As) into (100), (110), and (111) germanium (Ge) substrates at 500 to 700 °C using a metal--organic vapor phase epitaxy (MOVPE) system with tertiarybutylarsine (TBAs) as the As source was investigated for the n-type source/drain formation of Ge metal--oxide--semiconductor field effect transistors (MOSFETs). The surface concentration of As analyzed by secondary ion mass spectroscopy (SIMS) was approximately $1\times 10^{19}$ cm-3 and the diffusion constant was one order of magnitude smaller than that of As induced by ion implantation at 700 °C. The diffusion constant was linearly dependent on the As concentration, and the activation energy and pre-exponential factor of the As diffusion constant were found to be 1.9 eV and $6.2\times 10^{-3}$ cm2/s, respectively. The electron carrier concentration profiles were also evaluated by spreading resistance profiling (SRP) to confirm dopant activation.

• 2011-01-25

著者

• Takenaka Mitsuru

  Department Of Electrical Engineering And Information Systems School Of Engineering The University Of

• Sugiyama Masakazu

  Department Of Biotechnology Graduate School Of Agriculture And Life Sciences The University Of Tokyo

• Takagi Shinichi

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Nakano Yoshiaki

  Department Of Electrical Engineering And Information Systems The University Of Tokyo

• Takagi Shinichi

  Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

• Morii Kiyohito

  Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

関連論文

• Importance of the Retro-Mammary Space as a Route of Breast Cancer Metastasis
• Histologic Examination of Two Cases of Cystosarcoma Phyllodes with Pulmonary Metastases
• Identification of Pathologic Parathyroid Glands in Patients with Primary Hyperparathyroidism
• Strong Bxciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al_Ga_As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential
• Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH_4/H_2/Ar and O_2(Semiconductors)
• Optimization of Polysilane Structure as Fast-Etching Bottom Antireflective Coating for Deep Ultraviolet Lithography
• Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy
• Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
• Intersubband Transition at 1.52μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
• Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy
• LAPAROSCOPIC TREATMENT FOR PERFORATED APPENDICITIS WITH PELVIC ABSCESS
• Efficacy of Absorbable Clips Compared with Metal Clips for Cystic Duct Ligation in Laparoscopic Cholecystectomy
• Laparoscopic Wedge Resection for Gastric Perforation After Endoscopic Mucosal Resection : Report of a Case
• Solitary Splenic Metastasis from Ovarian Cancer Successfully Treated by Hand-Assisted Laparoscopic Splenectomy : Report of a Case
• The Usefulness, Indications, and Complications of Laparoscopy-Assisted Colectomy in Comparison with Those of Open Colectomy for Colorectal Carcinoma
• Structures and Electrical Properties of β- and θ-(BTM-TTP)_2SbF_6
• Application of Organic Silicon Clusters to Pattern Transfer Process for Deep UV Lithography
• GaN-Based High-Speed Intersubband Optical Switches
• Influence of Wavelength Detuning on Device Performance of Electroabsorption Modulator Integrated Distributed Feedback Lasers Based on Identical Epitaxial Layer Approach (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• Influence of Wavelength Detuning on Device Performance of Electroabsorption Modulator Integrated Distributed Feedback Lasers Based on Identical Epitaxial Layer Approach (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
• InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
• High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
• Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
• Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
• Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
• Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
• Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis Based on Experimental Reaction Data
• Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
• Effect of Y-Doping on Resistance Degradation of Multilayer Ceramic Capacitors with Ni Electrodes under the Highly Accelerated Life Test
• Aging Behavior of Ni-Electrode Multilayer Ceramic Capacitors with X7R Characteristics
• Semiconductor Waveguide Optical Isolator Incorporating Ferromagnetic Epitaxial MnSb for High Temperature Operation
• Waveguide-Based 1.5μm Optical Isolator Based on Magneto-Optic Effect in Ferromagnetic MnAs
• Demonstration of All-Optical Wavelength Converter Based on Fabry-Perot Semiconductor Optical Amplifier
• Wide-Angle Coupling to Multi-Mode Interference Devices : A Novel Concept for Compacting Photonic Integrated Circuits
• Evidence of Sr-Deficiency in Bi_2Sr_Ca_1Cu_2O_8 and Preparation of Stoichiometric Semiconducting Bi_2Sr_2Ca_1Cu_2O_8
• Intergration of Terraced Laser Diode and Garnet Crystals by Wafer Direct Bonding
• Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
• Analysis of Distributed Feedback Semiconductor Laser-Electroabsorptiorn Modulator Integrated Light Source, Including Gain-Coupled Structure
• Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers with Low Threshold Current and High Single-Longitudinal-Mode Yield
• InGaAs/InP Gain-Coupled Distributed Feedback Laser with a Corrugated Active Layer
• Replacements of Amino Acid Residues at Subsites and Their Effects on the Catalytic Properties of Rhizomucor pusillus Pepsin, an Aspartic Proteinase from Rhizomucor pusillus
• High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique
• Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors under Full Ballistic Transport
• Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2 Interfacial Layers
• Design and Fabrication of Monolithically Integrated Lateral-Electrode Etched-Mirror Laser with Y-Branch Single-Mode Waveguide in GaAs/AlGaAs
• Formation of High-Contrast Periodic Corrugations by Optimizing Optical Parameters of Photoresists in 325 nm Laser Holographie Exposure
• Characterization of P- and N-Type Impurity Diffusions in GaAs from Doped Silica Films
• Fabrication of TE/TM Mode Splitter Using Completely Buried GaAs/GaAlAs Waveguide
• Wavelength Filtering Operation in Absorptive-Grating Gain-Coupled Distributed-Feedback MQW Lasers
• Decrease in Deposition Rate and Improvement of Step Coverage by CF_4 Addition to Plasma-Enhanced Chemical Vapor Deposition of Silicon Oxide Films
• Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition
• Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD
• High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal--Organic Vapor Phase Epitaxy
• Diffraction Efficiency of Holographic Grating Formed in Au Nano particle-Doped Sol–Gel Silica Film by Laser Irradiation
• Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal--Organic Source
• Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics
• Influences of Supplementary Dietary Tungsten on Methionine Metabolism in Rabbits Fed a Low-Cholesterol plus Methionine Diet
• GaInAsP/InP Directional Coupler Loaded with Grating for Optically-Controlled Switching(Special Issue on Recent Progress of Integrated Photonic Devices)
• 1.55 μm InGaAs/InAlAs/InP Quantum Wells with Mass-Dependent Width for Polarization-Independent Optical Modulation
• Development of Metal-Organic Vapor Phase Diffusion Enhanced Selective Area Epitaxy, a Novel Metal-Organic Vapor Phase Epitaxy Selective Area Growth Technique, and Its Application to Multi-Mode Interference Device Fabrication
• Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy
• Fabrication of Multiple-Electrode Chirped-Grating-Tunable Distributed-Feedback Lasers
• Fabrication and Characteristics of an Integrated DFB Laser/Amplifier Having Reactive-Ion-Etched Tilted End Facets
• Four Channel Ridge DFB Laser Array for 1.55μm CWDM Systems by Wide-Stripe Selective Area MOVPE(Semiconductor Devices,Recent Advances in Integrated Photonic Devices)
• Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
• Analysis of GaInAsP Surfaces by Contact-Angle Measurement for Wafer Direct Bonding with Garnet Crystals
• Direct Bonding between Quaternary Compound Semiconductor and Garnet Crystals for Integrated Optical Isolator
• Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy : Gas-Phase Concentration Analysis
• Size and Shape Transformation of TiO_2 Nanoparticles by Irradiation of 308-nm Laser Beam
• Measurement of Focusing Properties of Axially Asymmetric Lenses Using Moire Technique
• Low-Concentration Cadmium Diffusion into GaAs
• ？？/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
• Investigation of InAlAs Oxide/InP Metal–Oxide–Semiconductor Structures Formed by Wet Thermal Oxidation
• Electron Mobility Enhancement of Extremely Thin Body In_Ga_As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
• Effect of GaAs Step Layer on InGaAs/GaAsP Quantum Well Solar Cells
• Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy
• Optimization of Gas-Switching Sequence for InGaAs/GaAsP Superlattice Structures Using In situ Wafer Curvature Monitoring (Special Issue : Photovoltaic Science and Engineering)
• Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
• Strain-Balanced InGaAs/GaAsP Superlattice Solar Cell with Enhanced Short-Circuit Current and a Minimal Drop in Open-Circuit Voltage
• Kinetics of Subsurface Formation during Metal–Organic Vapor Phase Epitaxy Growth of InP and InGaP
• Effects of Strain on the Performance of InGaAs/GaAsP Multiple-Quantum-Well Solar Cells Correlated with In situ Curvature Monitoring
• III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
• Characterization of Ni--GaSb Alloys Formed by Direct Reaction of Ni with GaSb
• Characterization of Ni-GaSb Alloys Formed by Direct Reaction of Ni with GaSb
• Precursor Evaluation for Cu-Supercritical Fluid Deposition Based on Adhesion Properties and Surface Morphology
• Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on (110) Si
• Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
• Low Temperature Metal Organic Vapor Phase Epitaxial Growth of AlN by Pulse Injection Method at 800 °C
• Simple Kinetic Model of ECR Reactive Ion Beam Etching Reactor for the Optimization of GaAs Etching Process
• Reduction in Interface Trap Density of Al
• Size Controlled Formation of Gold Nanoparticles Using Photochemical Grwoth and Photothermal Size Reduction by 308 nm Laser Pulses
• InGaAsP Grating Couplers Fabricated Using Complementary-Metal--Oxide--Semiconductor-Compatible III--V-on-Insulator on Si
• AlN Waveguide with GaN/AlN Quantum Wells for All-Optical Switch Utilizing Intersubband Transition
• Development of a vertical optical coupler using a slanted etching of InP/InGaAsP waveguide
• Fabrication and Measurement of AlN Cladding AlN/GaN Multiple-Quantum-Well Waveguide for All-Optical Switching Devices Using Intersubband Transition
• Intersubband Transition at 1.52 μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy
• Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors on (110) Si (Special Issue : Solid State Devices and Materials)
• Factors Determining the Generation of Polycrystalline Growth over Masks in Selective-Area Metalorganic Vapor Phase Epitaxy: Gas-Phase Concentration Analysis
• Comparison of Semiconductor--Electrolyte and Semiconductor--Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode

もっと見る 閉じる

スポンサーリンク