Low-Concentration Cadmium Diffusion into GaAs
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概要
- 論文の詳細を見る
Experimental results to obtain low p-type surface concentration into GaAs at high temperature using Ga-Cd alloy as a diffusion source, for the fabrication of a bipolar transistor optical switch, have been presented for the first time. The values of the diffusion coefficient of different proportions of cadmium into the alloy source are measured. The diffusion constant, D_0, and the activation energy, ε, for pure cadmium and 1% cadmium into the Ga-Cd alloy as a source have also been measured. The modified values of these parameters for pure cadmium seem to be different as compared to the data reported earlier due to the SiO_2 thin film deposited on the surface of the substrate to prevent arsenic loss at high temperature. The experimental results show a continuous reduction in surface concentration and diffusion coefficient by reducing the percentage quantity of cadmium into the Ga-Cd alloy diffusion source.
- 社団法人応用物理学会の論文
- 1991-06-15
著者
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Tada Kunio
Department Of Electronic Engineering University Of Tokyo
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Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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Nakano Yoshiaki
Department Of Surgery Ntt West Osaka Hospital
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Gautam Dinesh
Department Of Electronic Engineering University Of Tokyo
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Nakano Yoshiaki
Department Of Electrical Engineering And Information Systems The University Of Tokyo
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Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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