Linear Electrooptic Properties of ZnTe at 10.6 Microns
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概要
- 論文の詳細を見る
The low-frequency linear electrooptic coefficient r_<41>^T in semi-insulating ZnTe is measured at 10.6μm at room temperature. The measured value is (3.9±0.2)×10^<-12>m/V, which is only slightly smaller than that in the visible region. This result seems consistent with a lattice theory on the dispersion of r_<41>^T in crystals of a zincblende structure [D.P. Akitt et al; IEEE J. Quantum Electronics QE-6 (1970) 496]. The induced bire-fringence in ZnTe at 10.6μm is about 30 percent larger than that in GaAs, and about 35 percent smaller than that in CdTe. The figure of merit for the material F_1 (that is inversely proportional to the electric power necessary for a lumped modulator) at 10.6μm is found to be twice as large in ZnTe as in GaAs, which is the material most widely used for the electrooptic light modulation at 10.6μm.
- 社団法人応用物理学会の論文
- 1971-08-05
著者
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Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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Aoki Masaharu
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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Aoki Masaharu
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Tada Kunio
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Tada Kunio
Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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Aoki Masaharu
Department of Applied Electronics Engineering, Faculty of Industrial Science and Technology, Yamazaki, Noda-shi, Chiba 278
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