Epitaxial Growth of Undoped and Mg-Doped GaN

概要

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Gallium nitride was epitaxially grown on {0001} and {1102} sapphire by the vapor phase reaction of Ga-HCl-NH_3-Ar system. The growth rate on {1102} sapphire is 〜12 μm/hr, which is higher than that on {0001} sapphire by a factor of 〜1.5. The crystal on {1102} sapphire has a lower carrier concentration than that of the same thickness on {0001} sapphire by a factor of 〜0.5. The lowest carrier concentration and the highest electron mobility of undoped GaN obtained in this study were 1.6×10^<19> cm^<-3> and 78 cm^2/V.s, respectively, at 300 K. When heavily doped with Mg, the crystal grown changes markedly in growth morphology. The orientation relationships developed in an undoped or lightly Mg-doped state are {0001}_<GaN>//{0001}_<sapphire> and {1120}_<GaN>//{1102}_<sapphire>, and in a heavily doped state {1124}_<GaN>//{0001}_<sapphire> and {1120}_<GaN>//{1102}_<sapphire.>
社団法人応用物理学会の論文
1976-10-05