Photoluminescence of ZnS_<1-x>Se_x:Te Prepared by Solution Growth Using Sb-Chalcogenides as Solvent
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概要
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Photoluminescences due to Te isoelectronic traps were investigated for Te-doped ZnS_<1-x>Se_x crystals (0≤x≤1) grown from Sb-chalcogenide solutions. The optical depths of the isolated Te atom center and the nearest-neighbor Te-Te pair center were determined from the emission spectra and the excitation spectra at 77 K. These depths decreased monotonically with increasing Se composition x. The theoretical relation between the optical depth and the composition x on the basis of the Koster-Slater one-band one-site approximation was best fitted to the experimental data by assuming the values of the matrix element of the impurity potential J_<ZnS:Te>=2.41 eV, J_<ZnSe:Te>=1.27 eV, and the effective width of the valence band T_<ZnS>=6.02 eV, T_<ZnSe>=6.21 eV. According to the criteria in the theory, excitons bound to the isolated Te atoms exist in ZnS_<1-x>Se_x:Te for 0≤x<0.85 and excitons bound to the Te-Te pairs exist throughout the entire composition range. The emission band observed at 2.61 eV in ZnSe:Te was shown to be due to the excitons bound to the Te-Te pairs.
- 社団法人応用物理学会の論文
- 1995-06-15
著者
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Kanie H
Department Of Applied Electronics Faculty Of Industrial Science And Technology Science University Of
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Araki H
Graduate School Of Science And Technology Niigata University
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Sano M
Sumitomo Metal Ind. Ltd. Saga Jpn
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Araki H
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Araki Hisashi
Department Of Electronic Engineering Graduate School Of Engineering Osaka University:institute For F
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Araki Hitoshi
Graduate School Of Science And Technology Niigata University
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ARAKI Hiroshi
National Institute for Materials Science
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Sano Masatoshi
Department Of Electrical Engineering Faculty Of Engineering Tokyo University Of Science
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Sano Masatoshi
Department Of Electrical Engineering Faculty Of Engineering Science University Of Tokyo
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Araki Hiroyuki
Department Of Fermentation Technology Osaka University.
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KANIE Hisashi
Department of Applied Electronics Faculty of Industrial Science and Technology, Science University o
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Kanie Hisashi
Department Of Applied Electronics Faculty Of Industrial Science And Technology Science University Of
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