Structural and Photoluminescence Study of Coevaporated CuInSe2/Si(100) Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
Microstructural and radiative properties of CuInSe2 films prepared by three-source evaporation have been investigated by transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS) and photoluminescence analysis (PL). To identify the energy levels associated with various defects, photoluminescence measurements have been carried out on as-deposited and annealed polycrystalline CuInSe2 thin films deposited onto (100)-oriented Si wafers doped with $10^{15}$/cm3 of boron. The behavior of PL spectra as function of temperature and excitation intensity is reported. PL spectra of thin films before and after annealing in argon atmosphere at 400 °C show emission peaks ranging from 0.88 to 1 eV. Annealing strongly increases PL signal at 0.958 eV. A mechanism that provides a qualitative explanation for the observed PL results is described.
- 2006-03-15
著者
-
Sano Masatoshi
Department Of Electrical Engineering Faculty Of Engineering Science University Of Tokyo
-
Ando Shizutoshi
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
-
Merdes Saoussen
Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science, 1-14-6 Kudankita, Chiyoda-ku, Tokyo 102-0073, Japan
-
Ando Shizutoshi
Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
-
Bechiri Lakhdar
Laboratoire de Cristaux et Couches Minces, Institut de Physique, Université Badji Mokhtar, BP. 12, 23200 Sidi Amar, Annaba, Algeria
-
Benabdeslem Mohammed
Laboratoire de Cristaux et Couches Minces, Institut de Physique, Université Badji Mokhtar, BP. 12, 23200 Sidi Amar, Annaba, Algeria
-
Benslim Noureddine
Laboratoire de Cristaux et Couches Minces, Institut de Physique, Université Badji Mokhtar, BP. 12, 23200 Sidi Amar, Annaba, Algeria
-
Madelon Roger
Laboratoire d'Etude et de Recherche des Matériaux, FRE 2149 CNRS, Institut des Sciences de la Matière et du Rayonnement ISMRA, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France
-
Nouet Gérard
Equipe de Structure et Comportement Thermodynamique des Matériaux, Laboratoire de Cristallographie des Matériaux, UMR 6508 CNRS, Institut des Sciences de la Matière et du Rayonnement, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France
-
Madelon Roger
Laboratoire d'Etude et de Recherche des Matériaux, FRE 2149 CNRS, Institut des Sciences de la Matière et du Rayonnement ISMRA, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France
-
Bechiri Lakhdar
Laboratoire de Cristaux et Couches Minces, Institut de Physique, Université Badji Mokhtar, BP. 12, 23200 Sidi Amar, Annaba, Algeria
-
Benslim Noureddine
Laboratoire de Cristaux et Couches Minces, Institut de Physique, Université Badji Mokhtar, BP. 12, 23200 Sidi Amar, Annaba, Algeria
-
Benabdeslem Mohammed
Laboratoire de Cristaux et Couches Minces, Institut de Physique, Université Badji Mokhtar, BP. 12, 23200 Sidi Amar, Annaba, Algeria
-
Merdes Saoussen
Department of Electrical Engineering, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan
関連論文
- 液体急冷凝固法により作製したTi-Ni-Cu合金の形状記憶特性
- Study on the Crystal Structure of CdInGaS_4 and Cd_3InGaS_6 by Computer Simulation Method
- Green Emission in CdS Films Deposited on CdInGaS_4 by Evaporation Method
- Optical Properties of Zn_xCd_InGaS_4 System
- Study on the Crystallographic and Photoluminescent Properties of Cd_3InGaS_6. : II. Photoluminescence
- Study on the Crystallographic and Photoluminescent Properties of Cd_3InGaS_6. I. Crystallographic Study
- Green Emission in CdS/CdInGaS_4
- Electrical and Optical Properties of ZnS:Sb, Te Grown from Sb_Te_ Solution
- Photoluminescence in ZnSe:Te Prepared by Solution Growth
- Photoluminescence in Sb-Doped ZnS
- Growth of Ba_2NaNb_5O_ Thin Films on MgO(100) by the Pulsed Laser Ablation Method
- Effects of Postannealing in Oxygen Ambient on Leakage Properties of (Ba, Sr)TiO_3 Thin-Film Capacitors
- Effect of Laser Energy Density on the Fabrication of Ba_2NaNb_5O_ Thin Films by Pulsed Laser Ablation
- Control of the Orientation of Ferroelectric Bi_4Ti_3O_ Thin Films by Multi-step Metal Organic Decomposition Process
- Micropatterning of Ferroelectric Bi_4Ti_3O_ Using Electron-Beam-Induced Reaction of Metal Octylate Films
- Crystallization of Precursor Micropatterns of Ferroelectric Bi_4Ti_3O_ Fabricated by Electron Beam Scanning
- Photoluminescence of ZnS_Se_x:Te Prepared by Solution Growth Using Sb-Chalcogenides as Solvent
- Growth of ZnS_xSe_ Crystals from ZnSe-Sb_2S_3-Sb_2Se_3 Solutions
- Epitaxial Growth of Undoped and Mg-Doped GaN
- Properties of Ferroelectric Pb(Zr, Ti)O_3 Thin Films on TiSi_2/Si Substrates
- Pair Luminescence from Zn-Doped GaN
- Investigation of Moving Striations in a Low-Pressure Hg-Ar Discharge : I. Evaluation of Electron Temperature near the Reignition Region
- Statistical Characteristics of Turbulence in a Periodically Diverging-Converging Channel Flow
- Ba_2NaNb_5O_ Thin Films Prepared by the Pulsed Laser Ablation Method
- Effects of O_2 Gas Pressure in Heat Treatment on Surface Morphology and Electric Properties of Ferroelectric Bi_4Ti_3O_ Thin Films with c-Axis Orientation
- Investigation of Moving Striations in a Low-Pressure Hg-Ar Discharge : II. Study of the Mechanism for the Occurrence
- The Structure of the Outer Intermittent Region of Turbulent Boundary Layers with Injection and Suction through a Slit
- Structural and Photoluminescence Study of Coevaporated CuInSe2/Si(100) Thin Films
- Effect of Deposition Conditions on Photoluminescence of CuInSe2 Thin Films Prepared by Spin Coating Technique
- Direct Observation of an Ordered Phase in ($11\bar{2}0$) Plane InGaN Alloy
- Relationship between Surface Treatment of ZuTe Substrates and Morphology of CdSe Epitaxial Layers in Liquid Phase Epitaxy