Influence of Metal Impurities on Leakage Current of Si N^+ P Diode
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概要
- 論文の詳細を見る
Dependence of the leakage current of Si N^+ P diodes on the surface metal (Cu, Ni or Fe) concentration after quantitative contamination was investigated, and the causes of the leakage current were studied by SIMS, TEM and optical microscopy. Cu was gettered in the N^+ area, forming many large dislocation in the N^+ area and inducing some dislocations in the substrate near the junction; thus, the leakage current increased remarkably. Ni was getterd in the N^+ area also, but did not form large dislocations, so the leakage current did not increase. Fe was not gettered easily, and hence the leakage current increased corresponding to the Fe concentration.
- 社団法人応用物理学会の論文
- 1991-02-15
著者
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Sano M
Sumitomo Metal Ind. Ltd. Saga Jpn
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SUMITA Shigeo
Kyushu Electronic Metal Co., Ltd
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FUJINO Nobukatsu
Kyushu Electronic Metal Co., Ltd
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Sumita Shigeo
Kyushu Electronic Metal Co. Ltd
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Miyazaki Morimasa
Kyushu Electronic Metal Co., Ltd
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Sano Masakazu
Kyushu Electronic Metal Co., Ltd
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Miyazaki M
Silicon Technology R&d Center Sumitomo Sitix Corporation
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Fujino N
Kyushu Electronic Metal Corp.
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