Growth of ZnS_xSe_<1-x> Crystals from ZnSe-Sb_2S_3-Sb_2Se_3 Solutions
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概要
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ZnS_xSe_<1-x> crystals were grown in ampoules from ZnSe-Sb_2S_3-Sb_2Se_3 solutions, cooling from 1000℃ to 700℃ at a rate of 9℃/h. All grown crystals had zincblende structure. The sulfur composition x was varied from 0 to 0.99 by changing the sulfur fraction [S]/([S]+[Se]) in the starting material. The value of x was larger than the sulfur fraction in the starting material. The amount of Sb in all the grown crystals was undetectable (< 0.01 at.%). The sulfur composition dependence of the lowest gap determined from a photoluminescence excitation spectrum was represented as E_0(x)=2.82+0.35x+0.63x^2(eV) at 4.2 K. The energy of the peak position in a cathodoluminescence spectrum at room temperature was close to the energy of the lowest gap throughout the entire composition range.
- 社団法人応用物理学会の論文
- 1994-01-15
著者
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Kanie H
Department Of Applied Electronics Faculty Of Industrial Science And Technology Science University Of
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Araki H
Graduate School Of Science And Technology Niigata University
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Sano M
Sumitomo Metal Ind. Ltd. Saga Jpn
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Araki H
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Araki Hisashi
Department Of Electronic Engineering Graduate School Of Engineering Osaka University:institute For F
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Araki Hitoshi
Graduate School Of Science And Technology Niigata University
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Sano Masatoshi
Department Of Electrical Engineering Faculty Of Engineering Tokyo University Of Science
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Sano Masatoshi
Department Of Electrical Engineering Faculty Of Engineering Science University Of Tokyo
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Araki Hiroyuki
Department Of Fermentation Technology Osaka University.
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KANIE Hisashi
Department of Applied Electronics Faculty of Industrial Science and Technology, Science University o
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Kanie Hisashi
Department Of Applied Electronics Faculty Of Industrial Science And Technology Science University Of
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