Dependence of Grown-in Defect Behavior on Oxygen Concentration in Czoehralski Silicon Crystals
スポンサーリンク
概要
- 論文の詳細を見る
The behavior of grown-in voids in the as-grown state and during annealing was investigated for Czochralski silicon wafers using an atomic force microscope, Secco etching and an optical precipitate profiler. In previous reports, most grown-in voids have been found to consist of two octahedrons. In this report, it was shown that the percentage of the voids which consist of one octahedron increased as the oxygen concentration decreased. The annealing behavior of the voids was summarized as follows. In the case of supersaturated oxygen concentration, growth of the oxide films within the voids occurred and this reduced their ability to form flow patterns during Secco etching. The growth of oxide films within the voids was enhanced by excess interstitial silicon atoms injected during annealing in an oxygen ambient. In the case of undersaturated oxygen concentration, the annihilation a of the voids was also enhanced due to the injection of interstitial silicon atoms during annealing in an oxygen ambient. Interstitial silicon atoms contributed to both of these phenomena.
- 社団法人応用物理学会の論文
- 1999-10-15
著者
-
Sano M
Sumitomo Metal Ind. Ltd. Saga Jpn
-
YANASE Yoshio
Research and Development Center, Sumitomo Sitix Corporation
-
TSUYA Hideki
Research and Development Center, Sumitomo Sitix Corporation
-
Yanase Yoshio
Research And Development Center Sitix Division Sumitomo Metal Industries Ltd.
-
Umeno Shigeru
Research and Development Center, Sitix Division, Sumitomo Metal Industries Ltd.
-
Hourai Masataka
Research and Development Center, Sitix Division, Sumitomo Metal Industries Ltd.
-
Sano Masakazu
Research and Development Center, Sitix Division, Sumitomo Metal Industries Ltd.
-
Shida Yoshiaki
Research and Development Center, Sitix Division, Sumitomo Metal Industries Ltd.
-
Hourai M
Research And Development Center Sitix Division Sumitomo Metal Industries Ltd.
-
Umeno Shigeru
Research And Development Center Sitix Division Sumitomo Metal Industries Ltd.
-
Shida Yoshiaki
Research And Development Center Sitix Division Sumitomo Metal Industries Ltd.
-
Tsuya H
Research And Development Center Sitix Division Sumitomo Metal Industries Ltd.
-
TSUYA Hideki
Research and Development Center, Sitix Division, Sumitomo Metal Industries Ltd.
関連論文
- Transmission Electron Microscopy Observation of Defects Induced by Fe Contamination on Si(100) Surface
- Atomic force Microscope Observation of the Change in Shape and Subsequent Disappearance of "Crystal-Originated Particles" after Hydrogen-Atmosphere Thermal Annealing
- A New Method for Transmission Electron Microscope Observation of Grown-in Defects in As-Grown Czochralski Silicon (111) Crystals
- Influence of Crystal-Originated "Particle" Microstructure on Silicon Wafers on Gate Oxide Integrity
- Behavior of Defects in Heavily Boron Doped Czochralski Silicon
- Microstructure Observation of "Crystal-Originated Particles" on Silicon Wafers
- Effect of hydrogen irradiation during growth on molecular beam epitaxy of ZnO
- Effects of ZnO/MgO Double Buffer Layers on Structural Quality and Electron Mobility of ZnO Epitaxial Films Grown on c-Plane Sapphire
- Model Study of Spontaneous Discharge Fluctuations of a Membrane Potential
- Electrical and Optical Properties of ZnS:Sb, Te Grown from Sb_Te_ Solution
- Photoluminescence in ZnSe:Te Prepared by Solution Growth
- Photoluminescence in Sb-Doped ZnS
- Dependence of Grown-in Defect Behavior on Oxygen Concentration in Czoehralski Silicon Crystals
- Formation of Grown-in Defects during Czochralski Silicon Crystal Growth
- Relationship between Grown-in Defects in Czochralski Silicon Crystals
- Improved Intrinsic Gettering Technique for High-Temperature-Treated CZ Silicon Wafers
- A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer : Semiconductors and Semiconductor Devices
- Photoluminescence of ZnS_Se_x:Te Prepared by Solution Growth Using Sb-Chalcogenides as Solvent
- Growth of ZnS_xSe_ Crystals from ZnSe-Sb_2S_3-Sb_2Se_3 Solutions
- Influence of Metal Impurities on Leakage Current of Si N^+ P Diode
- Dependence of Gettering Efficiency on Metal Impurities
- TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface
- Comparison of Gettering Techniques by Means of Intentional Quantitative Cu Contamination : Electrical Properties of Condensed Matter
- Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon