A New Method for Transmission Electron Microscope Observation of Grown-in Defects in As-Grown Czochralski Silicon (111) Crystals
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-10-15
著者
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Ono Toshiaki
Research And Development Center Sumitomo Sitix Corporation
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Horie H
Fujitsu Lab. Ltd. Atsugi Jpn
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Horie Hiroshi
Research And Development Center Sumitomo Sitix Corporation
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Kitamura Takuya
Department Of Physical Electronics Tokyo Institute Of Technology
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Ochiai T
Research And Development Center Sumitomo Sitix Corporation
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YANASE Yoshio
Research and Development Center, Sumitomo Sitix Corporation
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OCHIAI Takashi
Research and Development Center, Sumitomo Sitix Corporation
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TSUYA Hideki
Research and Development Center, Sumitomo Sitix Corporation
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KITAMURA Takafumi
Research and Development Center, Sumitomo Sitix Corporation
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OKAMOTO Setsuo
Research and Development Center, Sumitomo Sitix Corporation
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Yanase Yoshio
Research And Development Center Sitix Division Sumitomo Metal Industries Ltd.
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Kitamura T
Murata Mfg. Co. Ltd. Kyoto Jpn
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Okamoto Setsuo
Research And Development Center Sumitomo Sitix Corporation
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Tsuya H
Research And Development Center Sitix Division Sumitomo Metal Industries Ltd.
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TSUYA Hideki
Research and Development Center, Sitix Division, Sumitomo Metal Industries Ltd.
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- A New Method for Transmission Electron Microscope Observation of Grown-in Defects in As-Grown Czochralski Silicon (111) Crystals
- Influence of Crystal-Originated "Particle" Microstructure on Silicon Wafers on Gate Oxide Integrity