Efficiency of Boron Getterimg for Iron Irmpurities in p/p^+ Epitaxial Silicon Wafers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-04-01
著者
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Ono Toshiaki
Research And Development Center Sumitomo Sitix Corporation
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Miyazaki Shuji
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
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Ochiai T
Research And Development Center Sumitomo Sitix Corporation
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MIYAZAKI Morimasa
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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MIYAZAKI Sumio
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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OCHIAI Takashi
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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OGUSHI Satoshi
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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SANO Masakazu
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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SHIGEMATSU Tatsuhiko
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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Sano Masakazu
Silicon Technology R&d Center Sumitomo Sitix Corporation
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Ogushi Satoshi
Silicon Technology R&d Center Sumitomo Sitix Corporation
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Shigematsu T
Silicon Technology R&d Center Sumitomo Sitix Corporation
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Miyazaki M
Silicon Technology R&d Center Sumitomo Sitix Corporation
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SANO Masakazu
Silicon Technology R & D Center, Sumitomo Sitix Corporation
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SHIGEMATSU Tatsuhiko
Silicon Technology Center, Sumitomo Sitix Corp.
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Miyazaki Morimasa
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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Miyazaki Sumio
Silicon Technology R&D Center, Sumitomo Sitix Corporation
関連論文
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- A New Method for Transmission Electron Microscope Observation of Grown-in Defects in As-Grown Czochralski Silicon (111) Crystals
- Influence of Crystal-Originated "Particle" Microstructure on Silicon Wafers on Gate Oxide Integrity
- Efficiency of Boron Getterimg for Iron Irmpurities in p/p^+ Epitaxial Silicon Wafers
- Behavior of Defects in Heavily Boron Doped Czochralski Silicon
- Microstructure Observation of "Crystal-Originated Particles" on Silicon Wafers
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