Axial Microscopic Distribution of Grown-in Defects in Czochralski-Grown Silicon Crystals
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概要
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The axial microscopic distribution of grown-in defects in Czochralski silicon was studied by means of IR light scattering tomography (LST) and preferential etching. IR scattering defects (defects observed with LST) were found to degrade the gate oxide integrity yield, and the axial density distribution of IR scattering defects and flow patterns (wedge-shaped etch patterns) fluctuated with oxygen concentration fluctuations along the growth axis. However, the defect density did not depend directly on oxygen concentration. It is considered that the formation of IR scattering defects is related to the solid-liquid intertace temperature fluctuations.
- 社団法人応用物理学会の論文
- 1993-05-15
著者
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Sumita Shigeo
Silicon Technology Center Sumitomo Sitix Corporation
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Hourai Masataka
Silicon Technology Center Sumitomo Sitix Corporation
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Sadamitsu Shinsuke
Silicon Technology R&d Center Sumitomo Sitix Corporation
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UMENO Shigeru
Silicon Technology Center, Sumitomo Sitix Corp.
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SHIGEMATSU Tatsuhiko
Silicon Technology Center, Sumitomo Sitix Corp.
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MURAKAMI Hiroki
Silicon Technology Center, Sumitomo Sitix Corp.
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SADAMITSU Shinsuke
Silicon Technology Center, Sumitomo Sitix Corp.
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HOURAI Masataka
Silicon Technology Center, Sumitomo Sitix Corp.
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- Influence of Fe Contamination in Czochralski-Grown Silicon Single Crystals on LSI-Yield Related Crystal Quality Characteristics
- Relationship between Grown-in Defects in Czochralski Silicon Crystals
- A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer : Semiconductors and Semiconductor Devices
- Generation of Oxidation-Induced Stacking Faults in Czochralski-Grown Silicon Crystals Exhibiting a Ring-like Distributed Stacking Fault Region
- Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon
- Gettering Characteristics of Heavy Metal Impurities in Silicon Wafers with Polysilicon Back Seal and Internal Gettering
- Axial Microscopic Distribution of Grown-in Defects in Czochralski-Grown Silicon Crystals
- Investigation of Grown-in Defect Formatiom in Czochralski Silicon Crystals by Optical Precipitate Profiler
- A Model for the Formation of Oxidation-Induced Stacking Faults in Czochralski Silicon