Investigation of Grown-in Defect Formatiom in Czochralski Silicon Crystals by Optical Precipitate Profiler
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概要
- 論文の詳細を見る
The grown-in defects in Czochlalski silicon with various growth-striation intervals are investigated using the optical precipitate profiler and compared with the distribution of interstitial oxygen concentrations [Oi]. The striation intervals do not influence the density or size of the grown-in defects. However, the defect size in the peak[0i] region is the same as the size in the valley [0i] region and the total defect volume in the peak is larger than the voltume in the valley. It is suggested that the grown-in defects grow by gathering vacancies into some nuclei in the peak region.
- 社団法人応用物理学会の論文
- 1997-06-15
著者
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Tomokage Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Kanda Tadashi
Silicon Engineering Control Center Sumitomo Sitix Corporation
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Hourai Masataka
Silicon Technology Center Sumitomo Sitix Corporation
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HOURAI Masataka
Silicon Technology R&D Center, Sumitomo Sitix Corporation
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