On the Basic Assumption to Obtain Carrier Concentration Profile by Differential Hall Coefficient Measurement
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概要
- 論文の詳細を見る
To obtain a carrier concentration profile in a diffused or an ion-implanted layer by differential Hall coefficient measurement, the layer is assumed to consist of isolated thin layers. The assumption is verified by replacing the thin layers with an equivalent circuit of networks of Hall emfs and resistors.
- 社団法人応用物理学会の論文
- 1996-03-15
著者
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YOSHIDA Masayuki
Yoshida Semiconductor Laboralory
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Tomokage Hajime
Department Of Electronics Engineering Fukuoka University
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Tomokage Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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YANAHIRA Tatsuki
Department of Electronics Engineering, Fukuoka University
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Yanahira Tatsuki
Department Of Electronics Engineering Fukuoka University:(present Address) Japan Avionics Co.
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