YOSHIDA Masayuki | Yoshida Semiconductor Laboralory

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概要

• 同名の論文著者
• Yoshida Semiconductor Laboraloryの論文著者

関連著者

• YOSHIDA Masayuki

  Yoshida Semiconductor Laboralory

• Yoshida M

  Functional Materials Research Laboratories Nec Corporation

• Yoshida M

  Yoshida Semiconductor Lab. Fukuoka Jpn

• TAKAHASHI Manabu

  Fukuoka Institute of Technology

• Tomokage Hajime

  Department Of Electronics Faculty Of Engineering Fukuoka University

• Tomokage Hajime

  Department Of Electrical Engineering Faculty Of Engineering Kyushu University

• Takahashi M

  Semiconductor Leading Edge Technologies Inc

• TOMOKAGE Hajime

  Department of Electronics, Fukuoka University

• YOSHIDA Masayuki

  Kyushu Institute of Design

• Tomokage H

  Fukuoka Univ. Fukuoka Jpn

• Tomokage Hajime

  Department Of Electronics Fukuoka University

• Yoshida Masayoshi

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Yoshida M

  National Institute Of Advanced Industrial And Science Technology (aist)

• Yashiro M

  Univ. Tokyo Tokyo

• Takahashi Minoru

  Ceramic Engineering Research Laboratory Nagoya Institute Of Technology

• KAMIURA Yoichi

  Faculty of Engineering, Okayama University

• TSURUNO Reiji

  Kyushu Institute of Design

• Tsuruno Reiji

  Department Of Visual Communication Design Kyushu Institute Of Design

• Kamiura Y

  Graduate School Of Natural Science And Technology Okayama University

• Kamiura Yoichi

  Faculty Of Engineering Okayama University

• MOROOKA Masami

  Fukuoka Institute of Technology

• TOMOKAGE Hajime

  Depratment of Electronics, Fukuoka University

• Tomokage Hajime

  Department Of Electronics Engineering Fukuoka University

• Yoshida Masayuki

  Yoshida Semiconductor Laboratory

• TANAKA Shuji

  Fukuoka Institute of Technology

• YANAHIRA Tatsuki

  Department of Electronics Engineering, Fukuoka University

• Yanahira Tatsuki

  Department Of Electronics Engineering Fukuoka University:(present Address) Japan Avionics Co.

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著作論文

• Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms
• Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
• One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
• Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
• Simulation of Phosphorus Diffusion Profiles with Different Phosphorus Surface Concentration at the Same Diffusion Temperature in Silicon
• On the Basic Assumption to Obtain Carrier Concentration Profile by Differential Hall Coefficient Measurement

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