Simulation of Phosphorus Diffusion Profiles with Different Phosphorus Surface Concentration at the Same Diffusion Temperature in Silicon

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-09-15

著者

• YOSHIDA Masayuki

  Yoshida Semiconductor Laboralory

• Yoshida Masayuki

  Yoshida Semiconductor Laboratory

• TANAKA Shuji

  Fukuoka Institute of Technology

関連論文

• Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms
• Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
• One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
• Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
• Simulation of Phosphorus Diffusion Profiles with Different Phosphorus Surface Concentration at the Same Diffusion Temperature in Silicon
• On the Basic Assumption to Obtain Carrier Concentration Profile by Differential Hall Coefficient Measurement

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