Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-05-15
著者
-
MOROOKA Masami
Fukuoka Institute of Technology
-
Yoshida M
Functional Materials Research Laboratories Nec Corporation
-
Yoshida M
Yoshida Semiconductor Lab. Fukuoka Jpn
-
YOSHIDA Masayuki
Yoshida Semiconductor Laboralory
-
TAKAHASHI Manabu
Fukuoka Institute of Technology
-
TOMOKAGE Hajime
Department of Electronics, Fukuoka University
-
Tomokage Hajime
Department Of Electronics Faculty Of Engineering Fukuoka University
-
Tomokage Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
-
Takahashi M
Semiconductor Leading Edge Technologies Inc
関連論文
- Temperature Dependence of ESR Lines Related to Phosphorus in Silicon
- Application of Zirconium Silicon Oxide Films to an Attenuated Phase-Shifting Mask in ArF Lithography
- Spectroscopy of Hard X-Rays (2-15 keV) Generated by Focusing Femtosecond Laser on Metal Targets
- Low Temperature Recovery of Ru(Ba, Sr)TiO_3/Ru Capacitors Degraded by Forming Gas Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing
- Electrical Properties of (Ba,Sr)TiO_3 Films on Ru Bottom Electrodes Prepared by ECR Plasma CVD at Extremely Low Temperature and RTA
- Low Temperature Deposition of (Ba, Sr)TiO_3 Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Structural and Electrical Characterization of SrTiO_3 Thin Films Prepared by Metal Organic Chemical Vapor Deposition
- Magnetic Domain Structure of Fe_3Al Alloy with Two-Phase Mixture Studied by Lorentz Microscopy
- Study of the Temperature Dependence of the Magnetization Direction in Cobalt Single Crystals by 1 MV Lorentz Electron Microscopy
- Stabilization of ZrSi_xO_y Films by Irradiation with an ArF Excimer Laser
- Fabrication of 0.1 μm Patterns Using an Alternating Phase Shift Mask in ArF Excimer Laser Lithography
- Fabrication of 0.13-μm Device Patterns by Argon Fluoride Excimer Laser Lithography with Practical Resolution Enhancement Techniques
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Study of the Bottom Antireflective Coating Process Using a High-Transparency Resist for ArF Excimer Laser Lithography
- Challenges to 0.1 μm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques
- Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms
- Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
- One Bond-Type Migration of Phosphorus in Silicon by Interstitialcy Mechanism
- Effect of Polishing on Time Dependence of Average Substitutional Impurity Concentration in Dissociative and Kick-Out Mechanisms
- Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon
- Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon
- A Simple Method to Determine λ from Isothermal Capacitance Measurements
- Three States of Substitutional Gold in Silicon
- Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
- Conformational Characteristics of Biphenylene-Ether-Ketone
- Concentration Profiles of Deep Levels Induced by Gold Diffusion in Silicon
- Stacking Fault Induced by Gold Diffusion in Silicon
- Stress-Optical Coefficients in Polycarbonates
- Picosecond Pulsed X-Ray Diffraction from a Pulsed Laser Heated Si(111)
- Time-Resolved X-ray Shadowgraphy Experiment of Laser Ablation of Aluminum using Laser-Induced Picosecond Pulsed X-rays
- Spall behavior of steels under hypervelocity impact
- Laser-Induced Shock Compression of Tantalum to 1.7 TPa
- Energy-Dispersive Synchrotron Radiation Topographic Observation of InAs/GaAs Lattice-Mismatched Layer
- X-ray Penetration Depth for Large Lattice-Mismatched Heteroepitaxial Layer by Dynamical Diffraction Theory using Computer Simulation
- Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
- Enhancement of Electroluminescence Intensity from Dye-Doped Poly(3-Alkylthiophene) Light Emitting Diode with Different Alkyl-Side-Chain Length
- Electroluminescent Diodes Utilizing Polysilanes
- Polarity-Dependent Multicolor Organic Electroluminescent Device
- Two-Band Electroluminescent Emission in Organic Electroluminescent Diode with Phthalocyanine Film
- Pulse Response of Electroluminescence in Poly(3-alkylthiophene) Mixed with Fluorescent Dye
- Ultraviolet Electroluminescent Diode Utilizing Poly(methylphenylsilane)
- Unique Electroluminescent Characteristics of Light-Emitting Diode Utilizing Poly(3-alkylthiophene) Containing Fluorescent Dye
- Novel Characteristics of Electrolumimescent Diode with Organic Multiple-Quantum-Well Structure
- Conformational Characteristics of Poly-ether-ether-ketone and Poly-ether-nitrile
- Polarization Anisotropy of Organic Electroluminescent Diode with Periodic Multilayer Structure Utilizing 8-Hydroxyquinoline Aluminum and Aromatic Diamine
- Color-Variable Electroluminescent Diode with Single Quantum Well Structure Utilizing 8-Hydroxyquinoline Aluminum and Aromatic Diamine
- Efficient Energy Transfer in Organic Multilayer Structure Utilizing 8-Hydroxyquinoline Aluminum and Aromatic Diamine
- Unique Dynamic Characteristics of Electroluminescent Diode with Superlattice Structure Utilizing Cyclopentadiene Derivative and Aromatic Diamine
- Novel Optical and Electroluminescent Characteristics in Organic Superlattice Structure Utilizing Cyclopentadiene Derivative and Aromatic Diamine
- Contour Detection of Underground Cylindrical Cavities by Means of Acoustic Pulse Reflection Method
- Characterization of Ion Implantation Dose by Raman Scattering and Photothermal Wave Techniques
- Secondary Defects of As^+ Implanted Silicon Measured by Thermal Wave Technique
- Mechanically Stacked GaAs/GaInAsP Dual-Junction Solar Cell with High Conversion Efficiency of More than 31%
- 5×5cm^2 GaAs and GaInAs Solar Cells with High Conversion Efficiency
- Effect of Substrate Orientation on Photoluminescence of GaNAs
- Exchange-Coupled Magnetic Bilayer Media for Thermomagnetic Writing and Flux Detection
- New Recording Method Combining Thermo-Magnetic Writing and Flux Detection
- Collective Molecular Motion during V-Shaped Switching in a Smectic Liquid Crystal
- Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine (TBA) and Dimethylhydrazine (DMHy)
- Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization
- Deep-Submicron Single-Gate CMOS Technology Using Channel Preamorphization
- High Storage Density Optical Recording with a Stable Micro Green Second Harmonic Generation Laser Consisting of Nd:YVO4 and KTP : High Density Recording
- High Storage Density Optical Recording with a Stable Micro Green Second Harmonic Generation Laser Consisting of Nd:YVO_4 and KTP
- Hydrolysis of Diribonucleoside Monophosphate Diesters Assisted by a Manganese(II) Complex
- Effect of Alkaline Earth Metal Ions on the Phosphodiester Hydrolysis of RNA
- Field-Emission Activation on Boron-Doped Chemical-Vapor-Deposited Polycrystalline Diamond Films
- Influence of the Piezoelectric Effect on the Energy Levels of InGaAs/GaAs Strained Quantum Wells Grown on (311)A GaAs
- Environmentally Benign Formation of Poly(methacrylate ester) Microspheres by Precipitation Copolymerization in Supercritical Carbon Dioxide
- Energy Level and Solid Solubility of Cobalt in Silicon by In-Depth Profile Measurement
- Simulation of Phosphorus Diffusion Profiles with Different Phosphorus Surface Concentration at the Same Diffusion Temperature in Silicon
- Growth and Characterization of Vertical-Cavity Surface-Emitting Lasers Grown on (311)A-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Reverse Recovery Time of Junction Diodes with High Capture Rate of Minority Carriers in the Low Injection Level
- Edge Effect on the Determination of Capture Rate of Minority Carriers from Transient Capacitance Measurement
- Differential Method for Measuring Thermally Stimulated Capacitance
- Simple ICTS Measurement Method
- Note on the Analysis of DLTS and C^2-DLTS
- Completely Erasable Phase Change Optical Disc II: Application of Ag-In-Sb-Te Mixed-Phase System for Rewritable Compact Disc Compatible with CD-Velocity and Double CD-Velocity
- High Linear Density Recording of 0.3 μm Domain Length on Magneto-Optical Disk : DRIVE TECHNOLOGY II
- Unprecedentedly Fast DNA Hydrolysis by the Synergism of the Cerium(IV)-Praseodymium(III)and the Cerium(IV)-Neodymium(III)Combinations^1
- DNA Hydrolysis by Cerium(IV) Does Not Involve either Molecular Oxygen or Hydrogen Peroxide
- High-Density Magneto-Optic Disk Using Highly Controlled Pit-Edge Recording : POST DEADLINE PAPERS
- Brief Measurement of Diffusion Profiles of Deep Impturities by Moving Schottky Contact
- An Improved Method to Determinethe Capture Cross-section of Majority Carriers from the Pulse-Filling Measurement
- Comparison of Dopant and Oxygen Striations at the Same Point in Czochralski Silicon Crystals
- Trap Levels of Beryllium in Silicon
- On the Basic Assumption to Obtain Carrier Concentration Profile by Differential Hall Coefficient Measurement
- Indiffusion and Out-Diffusion Profiles of Substitutional Au in Si Affected by Self-Interstitials and Vacancies
- Dinulear Lanthanum (III) Complex for Efficient Hydrolysis of RNA
- Field Emission Current Uniformity and Stability of Well-Aligned Carbon Nanotubes Synthesized in Methanol
- Investigation of Grown-in Defect Formatiom in Czochralski Silicon Crystals by Optical Precipitate Profiler
- Limiting Process for Gold In-Diffusion in Silicon with and without Extended Defects