Comparison of Dopant and Oxygen Striations at the Same Point in Czochralski Silicon Crystals
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概要
- 論文の詳細を見る
Dopant and oxygen striations, and grown-in defect striations in Czochralski silicon crystals grown under longperiod temperature fluctuations in the melt were measured at the exact same position in the crystal by spreading resistance measurement and an electron-beam-induced current method with Au diffusion, X-ray topography and micro-Fourier transform infrared spectroscopy, and an optical-precipitate-profiler (OPP) method, respectively. We observed that the rapid variations in dopant striations caused by remelting during crystal growth do not appear for oxygen striations. OPP defects were found to be distributed along the regions of the high oxygen concentration.
- 社団法人応用物理学会の論文
- 1996-11-01
著者
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Tomokage Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
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Kanda Tadashi
Silicon Engineering Control Center Sumitomo Sitix Corporation
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Kusano Ken-ichiro
Department Of Electronics Engineering Fukuoka University:(present Address) Vlsi Research & Devel
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