Field Emission Current Uniformity and Stability of Well-Aligned Carbon Nanotubes Synthesized in Methanol
スポンサーリンク
概要
- 論文の詳細を見る
Field emission current uniformity and the stability of well-aligned carbon nanotubes (CNTs) synthesized in methanol have been evaluated. For the growth of CNTs, a cobalt-loaded silicon substrate was heated by applying a direct current through the substrate in methanol. Well-aligned CNTs were grown vertically on the substrates at temperatures of 600 and 900 °C. The uniformity and the stability of field electron emission from the CNTs were measured with a scanning probe field emission current (SPFEC) system. The CNTs grown at 900 °C, which had higher crystallinity according to laser Raman spectroscopic analysis than those grown at 600 °C, showed excellent uniformity and high stability of the emission current. Over all measured areas of $2 \times 2$ mm2 on the well-aligned CNTs grown at 900 °C, a uniform emission current larger than 100 nA was obtained at an anode voltage of 280 V, when the gap from the CNTs to the anode was 30 μm. Emission current stability with a range of 5 to 6 μA at an anode voltage of 300 V was observed in the CNTs grown at 900 °C.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-08-25
著者
-
Tomokage Hajime
Department Of Electrical Engineering Faculty Of Engineering Kyushu University
-
Ando Toshihiro
National Institute For Materials Science
-
Gamo Hidenori
Technical Research Institute Toppan Printing Co. Ltd.
-
Nishitani-Gamo Mikka
Department of Applied Chemistry and Sensor Photonics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan
-
Shibasaki Takeshi
Department of Applied Chemistry and Sensor Photonics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan
-
Kikuchi Mayuko
Department of Applied Chemistry and Sensor Photonics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan
-
Ando Toshihiro
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
-
Gamo Hidenori
Technical Research Institute, Toppan Printing Co., Ltd., Sugito, Saitama 345-8508, Japan
-
Tomokage Hajime
Department of Electronics Engineering and Computer Science, Fukuoka University, Fukuoka 814-0180, Japan
関連論文
- Novel Selective Oxidation of Light Alkanes Using Carbon Dioxide. Oxidized Diamond as a Novel Catalytic Medium
- Oxidized Diamond Supported Ni Catalyst for Synthesis Gas Formation from Methane
- Oxidized Diamond:A Novel Support for Catalytic Dehydrogenation
- Low-temperature synthesis of graphitized nanofibers by a spray pyrolysis method and their electrochemical properties (特集 カーボンナノチューブの生成・応用最前線)
- Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms
- Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
- Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon
- Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon
- A Simple Method to Determine λ from Isothermal Capacitance Measurements
- Three States of Substitutional Gold in Silicon
- Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
- Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
- Field-Emission Activation on Boron-Doped Chemical-Vapor-Deposited Polycrystalline Diamond Films
- Environmentally Benign Formation of Poly(methacrylate ester) Microspheres by Precipitation Copolymerization in Supercritical Carbon Dioxide
- Energy Level and Solid Solubility of Cobalt in Silicon by In-Depth Profile Measurement
- Diels-Alder Reaction on the Clean Diamond (100) 2×1 Surface
- Reverse Recovery Time of Junction Diodes with High Capture Rate of Minority Carriers in the Low Injection Level
- Edge Effect on the Determination of Capture Rate of Minority Carriers from Transient Capacitance Measurement
- Differential Method for Measuring Thermally Stimulated Capacitance
- Simple ICTS Measurement Method
- Note on the Analysis of DLTS and C^2-DLTS
- Emission Characteristics of Amorphous Silicon Field Emitter Arrays Sealed in a Vacuum Package
- Fabrication of a New Field Emitter Array with a Built-in Thin-Film Transistor on Glass
- Fabrication of Field Emitter Arrays with Hydrogenated Amorphous Silicon on Glass
- Characterization of Multi-Walled Carbon Nanotube-Supported Pt Catalyst Prepared by Metal Nanocolloidal Solution for a Polymer Electrolyte Fuel Cell Catalyst
- An Improved Method to Determinethe Capture Cross-section of Majority Carriers from the Pulse-Filling Measurement
- Comparison of Dopant and Oxygen Striations at the Same Point in Czochralski Silicon Crystals
- Trap Levels of Beryllium in Silicon
- On the Basic Assumption to Obtain Carrier Concentration Profile by Differential Hall Coefficient Measurement
- Fabrication of Petal-Shaped Vertical Field Emitter Arrays
- Fabrication and Characterization of Cross-Edge-Structured Vertical Field Emitter Arrays
- Field Emission Characteristics of Well-Aligned Carbon Nanotubes Synthesized in Organic Liquids
- Composition and Bonding Properties of Carbon Nitride Films Grown by Electrochemical Deposition Using Acrylonitrile Liquid
- Field Emission Current Uniformity and Stability of Well-Aligned Carbon Nanotubes Synthesized in Methanol
- Liquid-Phase Deposition of Aligned Carbon Nanotubes Using Cobalt Catalyst
- Investigation of Grown-in Defect Formatiom in Czochralski Silicon Crystals by Optical Precipitate Profiler
- Interfacial Nanostructure of the Polymer Electrolyte Fuel Cell Catalyst Layer Constructed with Different Ionomer Contents
- Ultrafine Patterning of Nanocrystalline Diamond Films Grown by Microwave Plasma-Assisted Chemical Vapor Deposition