Composition and Bonding Properties of Carbon Nitride Films Grown by Electrochemical Deposition Using Acrylonitrile Liquid
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概要
- 論文の詳細を見る
Carbon nitride films were grown electrochemically through the application of a bias voltage to Si substrates immersed in acrylonitrile liquid. Continuous and uniform films were grown by the application of both negative and positive bias voltages. X-ray photoelectron spectra (XPS) of the grown films were studied to clarify their composition and bonding configurations. The XPS spectra show the presence of C, N, and O atoms as major components in the grown films. The atomic ratios of nitrogen to carbon in the films are estimated as 0.16–0.28, which are comparable to those in amorphous carbon nitride (a-CNx) films grown by conventional vapor deposition techniques. The analysis of C 1s and N 1s spectra reveals that the major bonding states of the grown films are attributed to a mixture of C$\equiv$N and hydrogenated C=N bonds.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-02-25
著者
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KIYOTA Hideo
Department of Electronics, School of Engineering, Tokai University
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GAMO Hidenori
Electronics Research Laboratory, Toppan Printing Co., Ltd.
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Ando Toshihiro
National Institute For Materials Science
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Kiyota Hideo
Department of Mechanical Engineering, Kyushu Tokai University, Kumamoto 862-8652, Japan
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Nishitani-Gamo Mikka
Department of Applied Chemistry, Toyo University, Kawagoe, Saitama 350-8585, Japan
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Nishitani-Gamo Mikka
Department of Applied Chemistry and Sensor Photonics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan
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