Fabrication of a New Field Emitter Array with a Built-in Thin-Film Transistor on Glass
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概要
- 論文の詳細を見る
We have designed and fabricated a new amorphous-silicon (a-Si) field emitter array (FEA) monolithically integrated with a thin-film transistor (TFT) on glass. In this FEA, a TFT was made of a-Si film deposited on a glass substrate with a chromium insertion electrode. A-Si emitter tips were formed on the drain of the TFT. The gate was separated into two parts: one was biased to about 140 V and used as an extraction gate for field electron emission, and the other was used as a conventional TFT gate to control the drain current, that is, the emission current. From the experimental results obtained using a 1000-tip FEA, the emission characteristics were found to be well controlled and stabilized by the TFT. The emission current of approximately 0.05 μA and with fluctuations of less than 1% was achieved at the extraction and the TFT gate voltages of 140 V and 30 V, respectively.
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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ITOH Junji
Electrotechnical Laboratory
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KANEMARU Seigo
Electrotechnical Laboratory
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Kanemaru S
Aist Ibaraki Jpn
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru Seigo
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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Itoh J
Aist Ibaraki Jpn
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Itoh J
Nanoelectronics Research Institute Aist
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Itoh Junji
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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GAMO Hidenori
Technical Research Institute, Toppan Printing Co., Ltd.
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GAMO Hidenori
Electronics Research Laboratory, Toppan Printing Co., Ltd.
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Gamo Hidenori
Technical Research Institute Toppan Printing Co. Ltd.
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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