A New Interferometric Displacement-Detection Method for Mask-to-Wafer Alignment Using Symmetrically-Arranged Three Gratings
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概要
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A new interferometric detection method of lateral displacement between the mask and the wafer using three gratings was developed. Experimental results show that the present method with 0.86 μm-period gratings has a detection sensitivity better than 0.005 μm independently of mask-wafer gap variations from 79 μm to 93 μm. This method is quite suitable for the precise mask-to-wafer alignment required in such proximity exposure systems as used in the X-ray lithography. The principle and experimental results are described.
- 社団法人応用物理学会の論文
- 1986-06-20
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