Vacuum Microtriode with Comb-Shaped Lateral Field-Emitter Array
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概要
- 論文の詳細を見る
A new vacuum triode with a lateral field-emitter array (FEA) has been fabricated, and its characteristics have been measured. The emitter has an array of 3-μm-wide-edged rectangular tips made of a 0.25-μm-thick tungsten film deposited on a quartz substrate with 9μm pitch. The emitter-to-gate and emitter-to-anode spacings were 0.5 μm and 5 μm, respectively. Emission and triode characteristics were measured. A transconductance of about 0.7 μS /150-tips were obtained at a gate voltage of 110 V and an anode voltage of 150 V. Device structure and characteristics are described.
- 社団法人応用物理学会の論文
- 1993-06-01
著者
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ITOH Junji
Electrotechnical Laboratory
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KANEMARU Seigo
Electrotechnical Laboratory
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Kanemaru S
Aist Ibaraki Jpn
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru Seigo
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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Itoh J
Aist Ibaraki Jpn
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Itoh J
Nanoelectronics Research Institute Aist
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Itoh Junji
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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TSUBURAYA Kazuhiko
FUTABA Corporation
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USHIKI Kazunari
Electrotechnical Laboratory
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TSUBURAYA Kazuhiko
Electrotechnical Laboratory
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