Charging Damage of Silicon-on-Insulator (SOI) Wafer Determined by Scanning Maxwell-Stress Microscopy
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
-
ITOH Junji
Electrotechnical Laboratory
-
YOKOYAMA Hiroshi
Electrotechnical Laboratory
-
KANEMARU Seigo
Electrotechnical Laboratory
-
Fujii Hideo
Core Research For Evolutional Science And Technology Program (crest) Japan Science And Technology Co
-
MATSUKAWA Takashi
Electrotechnical Laboratory
-
Matsukawa T
National Institute Of Advanced Industrial Science And Technology
-
NAGAO Masayoshi
Electrotechnical Laboratory
関連論文
- Property of Radiation-Induced Defects in Germanium Single Crystals
- Nanoscale Evaluation of Structure and Surface Potential of Gated Field Emitters by Scanning Maxwell-Stress Microscope
- Fabrication of Cantilever with Ultrasharp and High-Aspect-Ratio Stylus for Scanning Maxwell-Stress Microscopy
- Full Multiple-Scattering Approach to Na K-Edge XANES of NaCl-KCl Mixed Crystal
- Comparative Study of Anchoring Strengths for Photo- and Rubbing-Aligned Liquid Crystals on Photoisomerizable Polyimide Alignment Films
- PCb03 Photoalignment Layer Possessing Azo-group in Polymide Main Chain (III) : Anchoring Strength Measurements
- Novel Process for High-Density Buried Nanopyramid Array Fabrication by Means of Dopant Ion Implantation and Wet Etching
- Nonscalability of Alpha-Particle-Induced Charge Collection Area
- Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
- Undiagnosed sick sinus syndrome manifest during combined general and cervical epidural anesthesia
- Optimization of Nitridation and Reoxidation Conditions for EEPROM^* Tunneling Dielectric
- A High Density High Performance Cell for 4M Bit Full Feature Electrically Erasable/Programmable Read-Only Memory
- Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
- Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
- Point Defects in Cubic Boron Nitride after Neutron Irradiation
- Significant Increase in Blood Pressure after Discontinuation of Propofol Following Cardiac Surgery
- Prolonged Bowel Dysfunction after Spinal Anesthesia
- Single-Event Upset Test of Static Random Access Memory Using Single-Ion Microprobe
- Surface Plasmon-Enhanced Photocurrent in Organic Photoelectric Cells
- Enhanced Photocurrent in Organic Photoelectric Cells Based on Surface Plasmon Excitations
- Site Dependence of Soft Errors Induced by Single-Ion Hitting in 64 kbit Static Random Access Memory (SRAM)
- A Method to Compensate Decay of Power in SR Lithography : Lithography Technology
- Fabrication of Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Silicon Field Emitters with a Polysilicon Dual Gate
- Fabrication of a New Si Field Emitter Tip with Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Structure
- A New Metal-Oxide-Semiconductor Field-Effect-Transistor-Structured Si Field Emitter Tip
- Emission Characteristics of Ion-Implanted Silicon Emitter Tips
- Simplified High-Electric-Field Technique for Measuring the Liquid Crystal Anchoring Strength
- Optical Absorption in Silicon Oxide Film Near the SiO_2/Si Interface
- Optical Absorption in Ultrathin Silicon Oxide Film (SOLID STATE DEVICES AND MATERIALS 1)
- Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
- Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays
- Mechanism of Tungsten Plug Corrosion during Chemical Stripping Process : Scanning Maxwell-Stress Microscopy and Electrochemical Potentiometry Studies
- Charging Damage of Silicon-on-Insulator (SOI) Wafer Determined by Scanning Maxwell-Stress Microscopy
- CHF_3 Plasma Treatment of Si Field Emitter Arrays For No Damage Vacuum Packaging
- Electrical Characteristics of Air-Bridge-Structured Silicon Nanowire Fabricated by Micromachining a Silicon-on-Insulator Substrate
- Fabrication of a Nanometer-Scale Si-Wire by Micromachining of a Silicon-on-Insulator Substrate
- Strong Liquid Crystal Anchoring on Photo-Alignment Copolymer Films Containing ω-(4-chalconyloxy)alkyl Side Groups : Structure and Mechanical and Thermal Properties of Condensed Matter
- Ion Irradiation Effect on the Microscopic Potential Distribution of MgO Surface
- SOI Formation Using Lateral Solid-Phase Epitaxy Induced by Focused Ion Beam : Beam Induced Physics and Chemistry
- Emission Characteristics of Amorphous Silicon Field Emitter Arrays Sealed in a Vacuum Package
- Fabrication of a New Field Emitter Array with a Built-in Thin-Film Transistor on Glass
- Fabrication of Si Field Emitter Tip for a Three-Dimensional Vacuum Magnetic Sensor
- Fabrication of Silicon Field Emitter Arrays Integrated with Beam Focusing Lens
- Fabrication of Field Emitter Arrays with Hydrogenated Amorphous Silicon on Glass
- Novel Process for High-Density Buried Nanopyramid Array Fabrication by Means of Dopant Ion Implantation and Wet Etching
- Feasibility of Vacuum Microelectronics Voltage Comparator
- Fabrication and Characterization of Comb-Shaped Lateral Field-Emitter Arrays
- Low-Operation-Voltage Comb-Shaped Field Emitter Array
- Miniaturized Front-End HIC Using MBB Technology for Mobile Communication Equipment(Special Issue on Microwave and Millimeter-Wave Module Technology)
- Cationic Core Excitons in NaBr and MgBr_2
- Focusing Properties of Volcano-Shaped Dual-Gate Field Emitters
- Focusing Properties of Volcano-Shaped Dual-Gate Field Emitters
- Focusing Properties of a Novel Dual-Gate Edge Emitter
- X-Ray K Absorption Edge Structures of Chlorine Ion in [CoCl_2(en)_2]NO_3,[CoCl_2(en)_2]Cl and [Co (en)_3]Cl_3・3H_2O
- Fabrication of Silicon Field Emitter Arrays with 0.1-μm-Diameter Gate by Focused Ion Beam Lithography
- Fabrication of Petal-Shaped Vertical Field Emitter Arrays
- Fabrication and Characterization of Cross-Edge-Structured Vertical Field Emitter Arrays
- Vacuum Microtriode with Comb-Shaped Lateral Field-Emitter Array
- Low-Voltage Operation GaAs Receiver Front-End IC (Special Issue on Low-Power and High-Speed LSI Technologies)
- Probe Anode as a Characterization Tool for Field Emission Arrays
- Novel Liquid Crystalline Structure in Langmuir Monolayers of Amphiphilic Azobenzene Derivative
- Optical-Heterodyne Detection of Mask-to-Wafer Displacement for Fine Alignment
- Effects of Rubbing and Temperature Dependence of Polar Anchoring Strength of Homogeneously Aligned Nematic Liquid Crystal on Polyimide Langmuir-Blodgett Orientation Films
- A New Interferometric Displacement-Detection Method for Mask-to-Wafer Alignment Using Symmetrically-Arranged Three Gratings
- Optical Anisotropic Behavior in Cyanine Dye J-Aggregate Langmuir-Blodgett Films
- Control of Electronic State in Organic Semiconductor by Substituent Groups (Special Section on Organic Functional Devices)
- Functional Probing of Nanodevices by Scanning Maxwell-Stress Microscopy
- Visualizing the Interrelation between Surface Topograph and Surface Potential by means of a Scanning Maxwell Stress Microscope
- Charging Damage of Silicon-on-Insulator (SOI) Wafer Determined by Scanning Maxwell-Stress Microscopy
- Surface Plasmon-Enhanced Photocurrent in Organic Photoelectric Cells
- A Method to Compensate Decay of Power in SR Lithography