Novel Process for High-Density Buried Nanopyramid Array Fabrication by Means of Dopant Ion Implantation and Wet Etching
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概要
- 論文の詳細を見る
A simple and high-throughput process to fabricate a high-density buried nanopyramid array (BNPA) on a Si surface has been developed by means of dopant ion implantation and wet etching. In this process, the combination of two interesting etching phenomena was utilized to form the BNPA. One is the enhanced etching of ion-exposed SiO2 in HF. The other is the newly found retarded etching of ion-exposed Si in hydrazine (N2H4). A p-type Si(100) substrate with 27-nm-thick SiO2 was exposed to 50-keV phosphorus ions with a dotted pattern. Then, the ion-exposed SiO2 was selectively etched away by dipping in HF. Finally, the BNPA was formed under the patterned SiO2 layer by dipping in hydrazine. By using this simple process, the BNPA with 250 nm pitch was successfully fabricated. The electrical property of the fabricated nanopyramid was also investigated using scanning Maxwell-stress microscopy (SMM).
- 2001-04-30
著者
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Ohdomari Iwao
Kagami Memorial Laboratory For Material Science And Technology Waseda University
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Tanii Takashi
Department Of Electronics Information And Communication Engineering School Of Science And Engineerin
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Goto Tomomi
Department of Toxicology, Aichi Prefectural Institute of Public Health
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SHINADA Takahiro
Department of Electronics, Information and Communication Engineering, School of Science and Engineer
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MATSUKAWA Takashi
Electrotechnical Laboratory
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Koh Meishoku
Kagami Memorial Laboratory For Materials Science And Technology Waseda University
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Iida Tomoyuki
Department Of Electrical And Electronic Systems Saitama University:(present)nec Electron Devices Nec
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Sugita Atsushi
Department Of Electronics Information And Communication Engineering School Of Science And Engineerin
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Ohdomari Iwao
Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
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Shinada Takahiro
Department of Chemistry, Nagaoka University of Technology
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Shinada Takahiro
Department of Electronics, Information and Communication Engineering, School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan
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KOH Meishoku
Kagami Memorial Laboratory for Material Science and Technology, Waseda University
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Koh Meishoku
Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
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Iida Tomoyuki
Department of Electronics, Information and Communication Engineering, School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan
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Goto Tomomi
Department of Electronics, Information and Communication Engineering, School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan
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Sugita Atsushi
Department of Electronics, Information and Communication Engineering, School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan
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