Reduction of Fluctuation in Semiconductor Conductivity by One-by-One Ion Implantation of Dopant Atoms
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-01
著者
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Ohdomari Iwao
Kagami Memorial Laboratory For Material Science And Technology Waseda University
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Ohdomari Iwao
School Of Science And Engineering Waseda University:kagami Memorial Laboratory For Materials Science
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KOH Meishoku
Kagami Memorial Laboratory for Materials Science and Technology, Waseda University
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SHINADA Takahiro
Department of Electronics, Information and Communication Engineering, School of Science and Engineer
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ISHIKAWA Atsuki
Department of Electronics, Information and Communication Engineering, School of Science and Engineer
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HINOSHITA Chie
Department of Electronics, Information and Communication Engineering, School of Science and Engineer
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Koh Meishoku
Kagami Memorial Laboratory For Materials Science And Technology Waseda University
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Hinoshita Chie
Department Of Electronics Information And Communication Engineering School Of Science And Engineerin
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Shinada Takahiro
Department of Chemistry, Nagaoka University of Technology
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KOH Meishoku
Kagami Memorial Laboratory for Material Science and Technology, Waseda University
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