Fabrication of a New Si Field Emitter Tip with Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Structure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-30
著者
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Hirano Tomohisa
Department Of Electrical Engineering Faculty Of Engineering Ehime University
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ITOH Junji
Electrotechnical Laboratory
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KANEMARU Seigo
Electrotechnical Laboratory
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Kanemaru S
Aist Ibaraki Jpn
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru Seigo
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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Itoh J
Aist Ibaraki Jpn
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Itoh J
Nanoelectronics Research Institute Aist
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Itoh Junji
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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TANOUE Hisao
National Institute of Advanced Industrial Science and Technology (AIST)
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Tanoue H
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanoue H
National Institute Of Advanced Industrial Science And Technology (aist)
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Hirano T
Shizuoka Univ. Shizuoka Jpn
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Tanoue Hisao
Electrotechnical Laboratory
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Hirano T
Toppan Printing Co. Ltd.
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HIRANO Takayuki
Electrotechnical Laboratory
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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