Photoluminescence of Indirect-Band-Gap GaAs_<1-x>P_x (x=0.52) Implanted with Nitrogen Ions

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Molecular Beam Epitaxy of GaP and GaAs_P_x
Annealing Temperature Dependence of Photoluminescence in N-Implanted GaAs_P_x (x=0.36)
Laser Emission in Nitrogen-Implanted GaAs_P_x(x=0.36 and 0.43)
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