Photoluminescence of Nitrogen-Implanted GaAs_<1-x>P_x (x=0.44) near the Direct-Indirect-Transition Point
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1975-01-05
著者
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MAKITA Yunosuke
Electrotechnical Laboratory
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GONDA Shun-ichi
Electrotechnical Laboratory
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Makita Yoji
Marine Resources and Environment Institute, National Institute of Advanced Industrial Science and Technology (AIST)
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- Photoluminescence of Nitrogen-Implanted GaAs_P_x (x=0.44) near the Direct-Indirect-Transition Point
- Molecular Beam Epitaxy of GaP and GaAs_P_x
- Annealing Temperature Dependence of Photoluminescence in N-Implanted GaAs_P_x (x=0.36)
- Laser Emission in Nitrogen-Implanted GaAs_P_x(x=0.36 and 0.43)
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