Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
The photoluminescence properties of molecular beam epitaxially (MBE) grown ZnSe films have been studied. It was found that the critical film thickness above which the photoluminescence spectra show similar features is 0.8 μm. The photoluminescence spectra of MBE ZnSe at room temperature show dominant band-to-band emission and much weaker selfactivated emission. No edge emission was observed at low temperature. The intensity of the I_1 lines due to bound excitons at neutral acceptors is very weak. It is concluded that MBE ZnSe is of high-purity and contains lower concentration of the Zn-vacancy.
- 社団法人応用物理学会の論文
- 1981-10-05
著者
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YAO Takafumi
Electrotechnical Laboratory
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MAKITA Yunosuke
Electrotechnical Laboratory
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Maekawa Shigeru
Electronical Laboratory
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Yao Takafumi
Electrical Laboratory
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