Electrical and Photo-Iuminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature Effect
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-03-20
著者
-
OGURA Mutsuo
Electrotechnical Laboratory
-
YAO Takafumi
Electrotechnical Laboratory
-
MATSUOKA Seiichi
Electrotechnical Laboratory
-
MORISHITA Toshihide
Electrotechnical Laboratory
-
Yao Takafumi
Electrical Laboratory
関連論文
- Proposal of a New Self-Limited Growth and Its Application to the Fabrication of Atomically Uniform Quantum Nanostructures
- Electron States in Crescent GaAs Coupled Quantum-Wires
- Fabrication of Quantum Wire and Minute Buried Heterostructure by In Situ Etching and Selective MOCVD Growth
- A Novel Growth Technique for Single-Crystal Fibers: The Micro-Czochralski (μ-CZ) Method
- Distributed Feed Back Surface Emitting Laser Diode with Multilayered Heterostructure
- GaAs/Al_xGa_As Multilayer Reflector for Surface Emitting Laser Diode
- Si/Ge/Si Monolayer Heterostructure on Si(100) Studied by Surface-Sensitive EXAFS
- Valence Study of Orthorhombic and Tetragonal Ba_2YCu_3O_y : The Role of Oxygen Vacancies in High-T_c Superconductivity
- Local Structure in Orthorhombie and Tetragonal Ba_2YCu_3O_ : The Role of Oxygen Vacancies for High T_c Superconductivity
- Short Range Order in High T_c Superconductors Ba_xY_CuO_ and Sr_xLa_CuO_
- Valence and Coordination of Cu Ions in High T_c Superconductor Ba_xY_CuO_
- X-Ray Absorption Spectra of High T_c Superconducting Sr_xLa_CuO_
- Spectral Characteristics of Vertically Stacked Etched Multiple-Quantum-Wire Lasers Fabricated by Flow Rate Modulation Epitaxy
- V-groove AlGaAs/GaAs multilayers grown on patterned GaAs substrates with submicron gratings
- V-groove AlGaAs/GaAs multilayers grown on patterned GaAs substrates with submicron gratings
- Proposal of a New Self-Limited Growth and Its Application to the Fabrication of Atomically Uniform Quantum Nanostructures
- Electron Spin Relaxation in GaAs/AlGaAs Quantum Wires Analyzed by Transient Photoluminescence
- Electric Field Effect on Subband State Transitions Peaks in the Photoluminescence from a GaAlAs Quantum Well Structure
- Selective Coordination Epilaxy of Transition Metal Coordination Compounds III. : Evidence of Epitaxial Growth by Buerger Precession Method
- Approach to Superlattice of Transition Metal Coordination Compounds by Selective Coordinating Epitaxy
- Selective Coordination Epitaxial Growth of Quasi-One-Dimensional Transition Metal Coordination Compounds
- Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
- Transverse Mode Characteristics of a DBR-Surface Emitting Laser with Buried Heterostructure
- Fundamental Characteristic of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film : Etching and Deposition Technology
- Fundamental Characteristics of Capillary-Type Cluster Ion Source and Its Application for Selective Deposition of Aluminum Film
- Y-Branch Buried Heterostructure(BH) Laser by In-Situ Etching and Regrowth Process
- Gate-Length Dependence of Negative Differential Resistance in InGaAs/InAlAs Quantum Well Field-Effect Transistor
- Method to Determine the Effective Group Refractive Index of an Optical Waveguide Using a Steplike Optical Frequency Sweep Generator
- Scanning Optical Fiber Microscope for High Resolution Laser Beam Induced Current Image Observation of Semiconductor Defects
- Electrical and Photo-Iuminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature Effect
- Fabrication of Quantum Wire and Minute Buried Heterostructure by In Situ Etching and Selective MOCVD Growth
- Phosphorus Acceptor Levels in ZnSe Grown by Molecular Beam Epitaxy
- Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy
- Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam Epitaxy
- Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films
- Energy Relaxation Process in n-Type InSb under Strong Longitudinal Magnetic Fields
- Surface Lattice Strain Relaxation at the Initial Stage of Heteroepitaxial Growth of In_xGa_As on GaAs by Molecular Beam Epitaxy
- Reflection High-Energy Electron Diffraction Oscillations During Molecular Beam Epitaxial Growth of ZnSe on (001)GaAs
- Dynamic Reflection High-Energy Electron Diffraction Observations of the Atomic Layer Epitaxy Growth of Zn Chaleogenides
- The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs Substrates
- Surface Processes in ALE and MBE Growth of ZnSe: Correlation of RHEED Intensity Variation with Surface Coverage