Gate-Length Dependence of Negative Differential Resistance in InGaAs/InAlAs Quantum Well Field-Effect Transistor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-11-15
著者
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OGURA Mutsuo
Electrotechnical Laboratory
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SUGAYA Takeyoshi
Electrotechnical Laboratory (ETL)
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Kim Seong-jin
Electrotechnical Laboratory And Crest Japan Science And Technology Corporation(jst):new Energy And I
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SUGIYAMA Yoshinobu
Electrotechnical Laboratory
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Ogura Mutsuo
Electrotechnical Laboratory And Crest Japan Science And Technology Corporation(jst)
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Sugiyama Yoshinobu
Electrotechnical Laboratory And Crest Japan Science And Technology Corporation(jst)
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Sugaya Takeyoshi
Electrotechnical Laboratory
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Sugaya Takeyoshi
Electrotechnical Laboratory And Crest Japan Science And Technology Corporation(jst)
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Kim Seon-Jin
Electrotechnical Laboratory and CREST, Japan Science and Technology Corporation(JST):New Energy and Industrial Technology Development Organization(NEDO):(Present address)Electronics and Telecommunications Research Institute
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