Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
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概要
- 論文の詳細を見る
The oxidation using an atomic force microscope was applied in the fabrication of ultrafast metal-semiconductor-metal photoconductive switches. The photoconductive gap was formed by the oxidation of a 4 nm-thick-titanium layer. The photoconductive gap which was 100 nm wide and covered with the oxidized titanium which is not only a good insulator but also transparent to the excitation beam. A full width at half-maximum response of 380 fs was obtained at a bias voltage of 10 V.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Ishii Masami
Electrotechnical Laboratory
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OHTA Kimihiro
Electrotechnical Laboratory
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SEGAWA Kazuhito
Electrotechnical Laboratory
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SUGIYAMA Yoshinobu
Electrotechnical Laboratory
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Nakagawa Tadashi
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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Itatani Taro
Electrotechnical Laboratory
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Matsumoto Kazuhiko
Electrotechnical Laboratory
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Nakagawa Tadashi
Electrotechnical Laboratory, 1-1-4 Umezono Tsukuba-shi, Ibaraki 305, Japan
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Ishii Masami
Electrotechnical Laboratory, 1-1-4 Umezono Tsukuba-shi, Ibaraki 305, Japan
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Itatani Taro
Electrotechnical Laboratory, 1-1-4 Umezono Tsukuba-shi, Ibaraki 305, Japan
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Sugiyama Yoshinobu
Electrotechnical Laboratory, 1-1-4 Umezono Tsukuba-shi, Ibaraki 305, Japan
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Segawa Kazuhito
Electrotechnical Laboratory, 1-1-4 Umezono Tsukuba-shi, Ibaraki 305, Japan
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Ohta Kimihiro
Electrotechnical Laboratory, 1-1-4 Umezono Tsukuba-shi, Ibaraki 305, Japan
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