Room Temperature Operated Single Electron Transistor by STM Nano-Oxidation Process: Fabrication Process and Electrical Properties (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
スポンサーリンク
概要
- 論文の詳細を見る
New fabrication process for the nano-meter order structure was developed using the STM. The process named "STM nano-oxidation process" could oxidize the titanium metal to form the few tens of nano-meter oxidized titanium line which works as an energy barrier for the electron. The electrical properties of the TiO_x line are examined in detail. The single electron transistors with back gate, or side gate, and also those with multi-islands are fabricated using STM nano-oxidation process. The single electron transistor showed the clear Coulomb gap of - 160 mV, and the Coulomb oscillation with 400 mV period even at room temperature.
- 一般社団法人電子情報通信学会の論文
- 1996-11-25
著者
関連論文
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
- Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
- Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
- V-Shaped Gate High Electron Mobility Transistor (VHEMT)
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
- Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
- Room Temperature Nb-Based Single-Electron Transistors
- Single-Electron Transistors (SETs) with Nb/Nb Oxide System Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Nb/Nb Oxide-based Planar-Type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
- Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
- Surface Observation and Modification of Si Substrate in NH_4F and H_2SO_4 Solutions
- Surface Observation and Modification of Si Substrate in Solutions
- Electrochemical Scanning Tunneling Microscopy and Atomic Force Microscopy Observationson Si(111) in Several Solutions
- Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
- pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Single Electron Memory at Romm Temperature: Experiment and Simulation
- Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
- High Temperature Stable W-GaAs Schottky Barrier
- Submicron-Length Tungsten-Gate Self-Aligned GaAs FET
- Ultra-Low Biased Field Emitter Using Single Wall Carbon Nanotube Directly Grown onto Silicon Tip by Thermal CVD
- Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
- GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices
- Control of Current in 2DEG Channel by Oxide Wire Formed Using AFM
- Oxidation Using AFM and Subsequent Etching in Water of Inverted-Type δ-Doped HEMT
- Room Temperature Operated Single Electron Transistor by STM Nano-Oxidation Process: Fabrication Process and Electrical Properties (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Oxidation Using AFM and Subsequent Etching in Water of Inverted-Type Delta-Doped HEMT
- Room Temperature Nb-Based Single-Electron Transistors