Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• GOTOH Yasuhito

  Department of Electronic Science and Engineering, Kyoto University

• Gotoh Y

  Tsukuba Univ. Ibaraki Jpn

• Harris James

  Stanford University Stanford

• Maeda T

  Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Maeda T

  Central Research Laboratory Hitachi Ltd.

• Matsumoto K

  Nippon Sanso Corp. Ibaraki Jpn

• Matsumoto K

  Electrotechnical Lab. Ibaraki‐kenn Jpn

• Matsumoto Kazuhiko

  Electrotechnical Laboratory (etl)

• Matsumoto Kazuhiko

  Advanced Industrial Science And Technology:tsukuba University:crest

• MAEDA Tatsuro

  Electron Devices Division, Electrotechnical Laboratory

• SHIRAKASHI Jun-ichi

  Electrical and Electronic System Engineering, Tokyo University of Agriculture and Technology

• Maeda T

  Electron Devices Division Electrotechnical Laboratory

• Gotoh Yasuhito

  Department Of Electronic Science And Engineering Kyoto University

• Gotoh Yoshikazu

  Information Equipment Research Laboratory

• Matsumoto Kazuhiko

  Electrotechnical Laboratory (elt)

• Matsumoto Kazuhisa

  Sumitomo Electric Industries Ltd.

• Matsumoto K

  Advanced Industrial Science And Technology:tsukuba University:crest

• GOTOH Yoshitaka

  Electrotechnical Laboratory MITI

• Harris James

  Stanford University Department Of Electrical Engineering

• Matsumoto Koh

  Tsukuba Laboratories Nippon Sanso Corporation

• Shirakashi Junichi

  Electrotechnical Laboratory

• Gotoh Yoshitaka

  Electrotechnical Laboratory

• Shirakashi Jun-ichi

  Electrotechnical Laboratory

• Matsumoto K

  Electrotechnical Laboratory

• Matsumoto Kazuhiko

  Electrotechnical Laboratory

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