Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate

スポンサーリンク

概要

• 論文の詳細を見る
• 2005-09-13

著者

• Maeda T

  Advanced Industrial Sci. And Technol. Ibaraki Jpn

• ENDO Kazuhiko

  National Institute of Advanced Industrial Science and Technology

• MASAHARA Meishoku

  National Institute of Advanced Industrial Science and Technology

• LIU Yongxun

  National Institute of Advanced Industrial Science and Technology

• ISHII Kenichi

  National Institute of Advanced Industrial Science and Technology

• TAKASHIMA Hidenori

  National Institute of Advanced Industrial Science and Technology

• MATSUKAWA Takashi

  National Institute of Advanced Industrial Science and Technology

• YAMAUCHI Hiromi

  National Institute of Advanced Industrial Science and Technology

• SUZUKI Eiichi

  National Institute of Advanced Industrial Science and Technology

• Yamauchi Hiromi

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Ishii K

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Suzuki E

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• SUGIMATA Etsurou

  National Institute of Advanced Industrial Science and Technology (AIST)

• Endo Kazuhiko

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Suzuki Eiichi

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Yamauchi Hiroshi

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Liu Yongxun

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Takashima Hidenori

  National Institute Of Advanced Industrial Science And Technology (aist)

• Sugimata Etsuro

  National Institute Of Advanced Industrial Science And Technology (aist)

• Matsukawa Takashi

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Ishii Kenichi

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)

関連論文

• The Impact of the Chuetsu Earthquake on Asthma Control
• Factors Influencing Adherence in Outpatients Using Beclomethasone Dipropionate Inhaler for Bronchial Asthma
• ADAM33 polymorphisms are associated with aspirin-intolerant asthma in the Japanese population
• Self-Aligned Planar Double-Gate Field-Effect Transistors Fabricated by a Source/Drain First Process
• Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
• Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
• Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam
• Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
• New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
• Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
• Feasibility of High-Data-Rate Media with Ge-Sb-Te Phase-Change Material
• Low-Leakage-Current Ultra-thin SiO_2 Film by Low-Temperature Neutral Beam Oxidation
• Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
• Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition
• Spectroscopic Ellipsometry for the Identification of Paracrystallites in the Ultra-Thin Thermal CVD Hydrogenated Amorphous Silicon Films
• FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
• Nonscalability of Alpha-Particle-Induced Charge Collection Area
• Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
• Undiagnosed sick sinus syndrome manifest during combined general and cervical epidural anesthesia
• Vertical Ultrathin-channel Multi-gate MOSFETs (MuGFETs) : Technological Challenges and Future Developments
• Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
• Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
• Device Design Consideration for V_-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
• P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
• Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
• Close Observation of the Geometrical Features of an Ultranarrow Silicon Nanowire Device
• Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
• Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
• Perinatal magnetic resonance fetal lung volumetry and fetal lung-to-liver signal intensity ratio for predicting short outcome in isolated congenital diaphragmatic hernia and cystic adenomatoid malformation of the lung
• Compatibility of HLA-A and -B Antigens in Patients with Unexplained Recurrent Abortion
• Correlation Between the TH1 and TH2 Cells by Intracellular Cytokine Detection and MLR-blocking Antibodies in Patients with Unexplained Recurrent Abortion
• Significant Increase in Blood Pressure after Discontinuation of Propofol Following Cardiac Surgery
• Single-Event Upset Test of Static Random Access Memory Using Single-Ion Microprobe
• Site Dependence of Soft Errors Induced by Single-Ion Hitting in 64 kbit Static Random Access Memory (SRAM)
• Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
• Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
• Investigation of Initial Growth Process of GaN Film on Sapphire Using Computational Chemistry
• Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
• Investigation of Growth Process of GaN Film on Sapphire by Computational Chemistry
• Computational Studies on GaN Surface Polarity and InN/GaN Heterostructures by Density Functional Theory and Molecular Dynamics
• Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
• Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics
• Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
• Planarization of Film Deposition and Improvement of Channel Structure for Fabrication of Anti-Resonant Reflecting Optical Waveguide Type X-crossing Vertical Coupler Filter
• Sidelobe Suppression of Vertical Coupler Filter with an X-Crossing Configuration
• Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
• High-Density Recording Mechanism of Magnetooptieal Disks
• InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate
• InGaAs/AlGaAs quantum wire distributed feedback buried hetero-structure laser diode by one time selective metalorganic chemical vapor deposition on ridge substrate
• AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate
• Influence of Media Surrounding Piezoelectric Ceramics on Current-Jump Phenomena
• Optimum Recording Conditions of Direct Overwrite Magneto-Optical Disk Drive for the Widest Power Margin
• Grain Size Dependence of Third Nonlinear Piezoelectric Coefficient in Lead Zirconate Titanate Ceramics
• Influence of Material Composition on 3rd Nonlinear Piezoelectric Coefficient in Lead Zirconate Titanate Ceramics
• Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
• Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays
• Mechanism of Tungsten Plug Corrosion during Chemical Stripping Process : Scanning Maxwell-Stress Microscopy and Electrochemical Potentiometry Studies
• CHF_3 Plasma Treatment of Si Field Emitter Arrays For No Damage Vacuum Packaging
• Electrical Characteristics of Air-Bridge-Structured Silicon Nanowire Fabricated by Micromachining a Silicon-on-Insulator Substrate
• Fabrication of a Nanometer-Scale Si-Wire by Micromachining of a Silicon-on-Insulator Substrate
• Investigation of low-energy tilted ion implantation for fin-type double-gate metal-oxide-semiconductor field-effect transistor extension doping (Special issue: Solid state devices and materials)
• Dual-metal-gate transistors with symmetrical threshold voltages using work-function-tuned Ta/Mo bilayer metal gates (Special issue: Solid state devices and materials)
• Ta/Mo stack dual metal gate technology applicable to gate-first processes (Special issue: Solid state devices and materials)
• Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
• AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate
• A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
• Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
• Establishment of reference ranges for ductus venosus waveform indices in the Japanese population
• Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
• Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
• Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Extension Doping
• Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication
• Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
• Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation (Special Issue : Microprocesses and Nanotechnology)
• InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate
• A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
• Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
• Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
• High-Frequency Precise Characterization of Intrinsic FinFET Channel
• A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
• Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate
• Dual-Metal-Gate Transistors with Symmetrical Threshold Voltages Using Work-Function-Tuned Ta/Mo Bilayer Metal Gates
• Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
• Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
• Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
• New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
• Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
• P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
• Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
• Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays
• Self-Aligned Planar Double-Gate Field-Effect Transistors Fabricated by a Source/Drain First Process
• Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
• 1/f Noise Characteristics of Fin-Type Field-Effect Transistors in Saturation Region
• Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
• Independent-Double-Gate FinFET SRAM Technology
• Atomic Layer Deposition of SiO
• Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
• Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)
• Atomic Layer Deposition of SiO₂ for the Performance Enhancement of Fin Field Effect Transistors
• Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

もっと見る 閉じる

スポンサーリンク