P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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MASAHARA Meishoku
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Maeda T
Advanced Industrial Sci. And Technol. Ibaraki Jpn
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MATSUKAWA Takashi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SAKAMOTO Kunihiro
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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ISHII Kenichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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YAMAUCHI Hiromi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SUZUKI Eiichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Ishii K
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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LIU Yongxun
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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TANOUE Hisao
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Suzuki E
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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HOSOKAWA Shinichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Hosokawa Shinichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Yamauchi Hiroshi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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