Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
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概要
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We demonstrate dopant profiling in ultrathin channels (UTCs) ($T_{\text{c}}=18--58$ nm) of vertical-type double-gate metal-oxide-semiconductor field-effect-transistors (DG MOSFET) by scanning nonlinear dielectric microscopy (SNDM). The vertical UTCs were fabricated by orientation-dependent-wet etching. Using ion implantation technology and subsequent furnace annealing, n+-p junctions, which correspond to the source/drain of the vertical-type DG MOSFET, were formed in the upper part of the UTC. To improve the accuracy of the vertical dopant profile in the UTC, the cross-section of the UTC was magnified by beveling with a small angle by chemical mechanical polishing. Using such a beveled sample, the dopant depth profile in the vertical UTC has been measured by SNDM with nanometer-scale resolution. On the basis of the measurements of the dopant profile, an effective channel length for the vertical DG MOSFET has also been estimated quantitatively.
- 2005-04-15
著者
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Masahara Meishoku
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Hosokawa Shinichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Suzuki Eiichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanoue Hisao
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Naitou Yuichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Matsukawa Takashi
Nanoelectronics Research Institute Aist
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Endo Kazuhiko
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Suzuki Eiichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Naitou Yuichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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