Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography

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概要

• 論文の詳細を見る
• 2003-06-30

著者

• MASAHARA Meishoku

  National Institute of Advanced Industrial Science and Technology

• LIU Yongxun

  National Institute of Advanced Industrial Science and Technology

• ISHII Kenichi

  National Institute of Advanced Industrial Science and Technology

• TAKASHIMA Hidenori

  National Institute of Advanced Industrial Science and Technology

• SUZUKI Eiichi

  National Institute of Advanced Industrial Science and Technology

• TSUTSUMI Toshiyuki

  Meiji University

• Ishii K

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Suzuki E

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

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