MASAHARA Meishoku | National Institute of Advanced Industrial Science and Technology
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概要
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- 同名の論文著者
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関連著者
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MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
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LIU Yongxun
National Institute of Advanced Industrial Science and Technology
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MATSUKAWA Takashi
National Institute of Advanced Industrial Science and Technology
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Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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YAMAUCHI Hiromi
National Institute of Advanced Industrial Science and Technology
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SUZUKI Eiichi
National Institute of Advanced Industrial Science and Technology
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ISHII Kenichi
National Institute of Advanced Industrial Science and Technology
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ISHIKAWA Yuki
National Institute of Advanced Industrial Science and Technology
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TAKASHIMA Hidenori
National Institute of Advanced Industrial Science and Technology
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ENDO Kazuhiko
National Institute of Advanced Industrial Science and Technology
著作論文
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam
- Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
- Vertical Ultrathin-channel Multi-gate MOSFETs (MuGFETs) : Technological Challenges and Future Developments
- Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
- A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors