Wada Akira | Institute Of Fluid Science Tohoku University
スポンサーリンク
概要
関連著者
-
Wada Akira
Institute Of Fluid Science Tohoku University
-
Samukawa Seiji
Institute Of Fluid Science Tohoku University
-
SAMUKAWA Seiji
Institute of Fluid Science, Tohoku University
-
HUANG Chi-Hsien
Institute of Fluid Science, Tohoku University
-
ENDO Kazuhiko
National Institute of Advanced Industrial Science and Technology
-
MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
-
Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
-
Huang Chi-hsien
Institute Of Fluid Science Tohoku University
-
Sasaki Toru
Institute Of Fluid Science Tohoku University
-
Takashi Matsukawa
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Meishoku Masahara
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
YONEMOTO Masahiro
Institute of Fluid Science, Tohoku University
-
Masahiro Yonemoto
Institute of Fluid Science, Tohoku University, 2-1-1 Katahiara, Aoba-ku, Sendai 980-8577, Japan
-
Sano Keisuke
Institute of Fluid Science, Tohoku University, 2-1-1 Katahiara, Aoba-ku, Sendai 980-8577, Japan
-
Kazuhiko Endo
National Institute of Advanced Industrial Science and Technology, 2-13 Tsukuba Central, Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Satoshi Yamasaki
National Institute of Advanced Industrial Science and Technology, 2-13 Tsukuba Central, Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Seiji Samukawa
Institute of Fluid Science, Tohoku University, 2-1-1 Katahiara, Aoba-ku, Sendai 980-8577, Japan
-
Kazuhiko Endo
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Keisuke Sano
Institute of Fluid Science, Tohoku University, 2-1-1 Katahiara, Aoba-ku, Sendai 980-8577, Japan
-
Yasuhara Shigeo
Institute of Fluid Science, Tohoku University, Sendai 980-8577, Japan
著作論文
- Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam
- High-Performance Three-Terminal Fin Field-Effect Transistors Fabricated by a Combination of Damage-Free Neutral-Beam Etching and Neutral-Beam Oxidation
- Super-Low-k SiOCH Film with Sufficient Film Modulus and High Thermal Stability Formed by Using Admixture Precursor in Neutral-Beam-Enhanced Chemical Vapor Deposition (Special Issue : Advanced Metallization for ULSI Applications)