High-Performance Three-Terminal Fin Field-Effect Transistors Fabricated by a Combination of Damage-Free Neutral-Beam Etching and Neutral-Beam Oxidation
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概要
- 論文の詳細を見る
Three-terminal fin field-effect transistors (3T-FinFETs) were fabricated by neutral-beam oxidation (NBO) to form gate silicon dioxide (SiO2). The 3T-FinFET fabricated by NBO showed higher device performance — namely, a higher subthreshold slope and a higher effective mobility — than that fabricated by conventional thermal oxidation. It is considered that those improved subthreshold slope and mobility are due to the fact that the three-dimensional structure of a SiO2 film fabricated by NBO has a lower interfacial state density and a lower roughness than a similar structure fabricated by the conventional thermal oxidation of a SiO2 film. The reasons for the lower interfacial state density and lower roughness are the low temperature and lattice plane independence of NBO in comparison with conventional thermal oxidation processes.
- 2010-04-25
著者
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Wada Akira
Institute Of Fluid Science Tohoku University
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Takashi Matsukawa
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Meishoku Masahara
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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YONEMOTO Masahiro
Institute of Fluid Science, Tohoku University
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Masahiro Yonemoto
Institute of Fluid Science, Tohoku University, 2-1-1 Katahiara, Aoba-ku, Sendai 980-8577, Japan
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Sano Keisuke
Institute of Fluid Science, Tohoku University, 2-1-1 Katahiara, Aoba-ku, Sendai 980-8577, Japan
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Kazuhiko Endo
National Institute of Advanced Industrial Science and Technology, 2-13 Tsukuba Central, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Satoshi Yamasaki
National Institute of Advanced Industrial Science and Technology, 2-13 Tsukuba Central, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Seiji Samukawa
Institute of Fluid Science, Tohoku University, 2-1-1 Katahiara, Aoba-ku, Sendai 980-8577, Japan
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Kazuhiko Endo
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Keisuke Sano
Institute of Fluid Science, Tohoku University, 2-1-1 Katahiara, Aoba-ku, Sendai 980-8577, Japan
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