Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam

スポンサーリンク

概要

• 論文の詳細を見る
• 2010-09-25

著者

• SAMUKAWA Seiji

  Institute of Fluid Science, Tohoku University

• HUANG Chi-Hsien

  Institute of Fluid Science, Tohoku University

• ENDO Kazuhiko

  National Institute of Advanced Industrial Science and Technology

• MASAHARA Meishoku

  National Institute of Advanced Industrial Science and Technology

• Samukawa Seiji

  Institute Of Fluid Science Tohoku University

• Endo Kazuhiko

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Wada Akira

  Institute Of Fluid Science Tohoku University

• Huang Chi-hsien

  Institute Of Fluid Science Tohoku University

関連論文

• Ultrathin Oxynitride Films Formed by Using Pulse-Time-Modulated Nitrogen Beams
• Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
• Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
• Novel Stacked Nanodisk with Quantum Effect Fabricated by Defect-free Chlorine Neutral Beam Etching
• A New Silicon Quantum-Well Structure with Controlled Diameter and Thickness Fabricated with Ferritin Iron Core Mask and Chlorine Neutral Beam Etching
• Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam
• Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
• Multi-Coil System for Electron Cyclcotron Resonance Plasma Generation
• Uniform Electron Cyclotron Resonance Plasma Generation for Precise ULSI Patterning
• Dependence of Electron Cyclotron Resonance Plasma Characteristics on Introduced Microwave Conditions
• Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
• New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
• Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
• Low-Leakage-Current Ultra-thin SiO_2 Film by Low-Temperature Neutral Beam Oxidation
• Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
• Control of Electron Transport in Two-Dimensional Array of Si Nanodisks for Spiking Neuron Device
• FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
• Fabrication of Defect-Free Sub-10nm Si Nanocolumn for Quantum Effect Devices Using Cl Neutral Beam Process
• Plasma-Radiation-Induced Interface States in Metal-Nitride-Oxide-Silicon Structure of Charge Coupled Device Image Sensor and Their Reduction Using Pulse-Time-Modulated Plasma
• Vertical Ultrathin-channel Multi-gate MOSFETs (MuGFETs) : Technological Challenges and Future Developments
• Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
• Ion Current Density and Ion Energy Distributions at the Electron Cyclotron Resonance Position in the Electron Cyclotron Resonance Plasma
• Ion Energy Distributions at the Electron Cyclotron Resonance Position in Electron Cyclotron Resonance Plasma
• Optical Diagnostics of a Pulsed Inductively Coupled Nitrogen Plasma
• Effects of Thermal Annealing for Restoration of UV Irradiation Damage during Plasma Etching Processes
• Effects of CF_3I Plasma for Reducing UV Irradiation Damage in Dielectric Film Etching Processes
• Control of UV Radiation Damages for the High Sensitive CCD Image Sensor
• On-Wafer Monitoring of Vacuum-Ultraviolet Radiation Damage in High-Density Plasma Processes
• High-Efficiency Low Energy Neutral Beam Generation Using Negative Ions in Pulsed Plasma
• High-Efficiency Neutral-Beam Generation by Combination of Inductively Coupled Plasma and Parallel Plate DC Bias : Nuclear Science, Plasmas, Electric Dischanges
• Growth of Preferentially Oriented Microcrystalline Silicon Film Using Pulse-Modulated Ultrahigh-Frequency Plasma
• Time-Modulated Electron Cyclotron Resonance Plasma Discharge for Controlling the Polymerization in SiO_2 Etching
• Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
• Plasma-Induced Deterioration of Mechanical Characteristics of Microcantilever
• High-Performance Three-Terminal Fin Field-Effect Transistors Fabricated by a Combination of Damage-Free Neutral-Beam Etching and Neutral-Beam Oxidation
• A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
• Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
• Reduction in Number of Sparks Generated in High-Density Plasma Process by Fixing the Wall Potential
• Novel Si Nanodisk Fabricated by Biotemplate and Defect-Free Neutral Beam Etching for Solar Cell Application
• Surface Reaction Enhancement by UV irradiation during Si Etching Process with Chlorine Atom Beam
• Electron Emission from Indium Tin Oxide/Silicon Monoxide/Gold Structure
• Novel Particle-Reduction System in Plasma-Enhanced Chemical Vapor Deposition Process of Interlayer Dielectrics
• High-Performance and Damage-Free Magnetic Film Etching using Pulse-Time-Modulated Cl2 Plasma
• Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
• Effects of Plasma Power and Plasma Sheath on Field Emission Properties of Carbon Nanotubes
• Magnetically Damage-free Etching of MTJ Film for Future 0.24-μm-rule MRAMs
• Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
• Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Extension Doping
• Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication
• Irradiation-Damages in Atmospheric Plasma Used in a Resist Ashing Process for Thin Film Transistors
• Direct Fabrication of Uniform and High Density Sub-10-nm Etching Mask Using Ferritin Molecules on Si and GaAs Surface for Actual Quantum-Dot Superlattice
• Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
• Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation (Special Issue : Microprocesses and Nanotechnology)
• Super-Low-k SiOCH Film with Sufficient Film Modulus and High Thermal Stability Formed by Using Admixture Precursor in Neutral-Beam-Enhanced Chemical Vapor Deposition (Special Issue : Advanced Metallization for ULSI Applications)
• Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices
• Room-Temperature Observation of Size Effects in Photoluminescence of Si.Ge./Si Nanocolumns Prepared by Neutral Beam Etching
• Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
• Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
• High-Frequency Precise Characterization of Intrinsic FinFET Channel
• A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
• Room-Temperature Observation of Size Effects in Photoluminescence of Si_Ge_/Si Nanocolumns Prepared by Neutral Beam Etching
• Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate
• Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
• Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
• New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
• Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
• New Magnetic Nanodot Memory with FePt Nanodots
• Plasma-Radiation-Induced Interface States in Metal-Nitride-Oxide-Silicon Structure of Charge-Coupled Device Image Sensor and Their Reduction Using Pulse-Time-Modulated Plasma
• Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
• 1/f Noise Characteristics of Fin-Type Field-Effect Transistors in Saturation Region
• Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
• Independent-Double-Gate FinFET SRAM Technology
• Surface Reaction Enhancement by UV irradiation during Si Etching Process with Chlorine Atom Beam
• Reduction of Moisture in Semiconductor Dry Process Equipment by Generating Extremely Low Oxygen Ambience
• Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
• Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)
• Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching

もっと見る 閉じる

スポンサーリンク