FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
スポンサーリンク
概要
- 論文の詳細を見る
- 2008-04-01
著者
-
MASAHARA Meishoku
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
-
Maeda T
Advanced Industrial Sci. And Technol. Ibaraki Jpn
-
ENDO Kazuhiko
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
-
MATSUKAWA Takashi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
-
SAKAMOTO Kunihiro
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
-
SUZUKI Eiichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
-
ENDO Kazuhiko
National Institute of Advanced Industrial Science and Technology
-
MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
-
LIU Yongxun
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
-
Suzuki E
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
SEKIGAWA Toshihiro
Nanoelectronices Research Institute, National Institute of Advanced Science and Technology (AIST)
-
KOIKE Hanpei
Nanoelectronices Research Institute, National Institute of Advanced Science and Technology (AIST)
-
Sakamoto Kunihiro
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Masahara Meishoku
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Sekigawa Toshihiro
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
-
Sekigawa Toshihiro
Nanoelectronices Research Institute National Institute Of Advanced Science And Technology (aist)
-
Suzuki Eiichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Liu Yongxun
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Koike Hanpei
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
-
Koike Hanpei
Nanoelectronices Research Institute National Institute Of Advanced Science And Technology (aist)
-
Matsukawa Takashi
Nanoelectronics Research Institute Aist
-
Liu Yongxun
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Matsukawa Takashi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
O'uchi Shin-ichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Endo Kazuhiko
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
-
Suzuki Eiichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
関連論文
- A Novel Process for Fabrication of Gated Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching
- The Impact of the Chuetsu Earthquake on Asthma Control
- Factors Influencing Adherence in Outpatients Using Beclomethasone Dipropionate Inhaler for Bronchial Asthma
- ADAM33 polymorphisms are associated with aspirin-intolerant asthma in the Japanese population
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films
- Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam
- Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Feasibility of High-Data-Rate Media with Ge-Sb-Te Phase-Change Material
- Low-Leakage-Current Ultra-thin SiO_2 Film by Low-Temperature Neutral Beam Oxidation
- Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
- Effects of Film Quality of Hydrogenated Amorphous Silicon Grown by Thermal Chemical-Vapor-Deposition on Subsequent in-situ Hydrogenation Processes
- Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition
- Spectroscopic Ellipsometry for the Identification of Paracrystallites in the Ultra-Thin Thermal CVD Hydrogenated Amorphous Silicon Films
- Adult Onset Anaphylactoid Purpura with Severe Gastrointestinal Involvement
- Effects of omeprazole and cisapride treatment in Japanese asthmatics with reflux esophagitis
- Clinical features of Japanese patients with chronic cough induced by gastroesophageal reflux
- FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
- Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
- Vertical Ultrathin-channel Multi-gate MOSFETs (MuGFETs) : Technological Challenges and Future Developments
- Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
- Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
- Device Design Consideration for V_-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
- P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
- Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
- Close Observation of the Geometrical Features of an Ultranarrow Silicon Nanowire Device
- Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
- Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
- 4 Polymorphisms in the prostaglandin E2 receptor subtype 2 gene confer susceptibility to aspirin-intolerant asthma(II. Asthma Genetics)
- Questionnaire-based Analysis of the Current Status of Adult Bronchial Asthma in Niigata Prefecture : Comparison with the Asthma Guidelines
- Behaviors of surfactant atoms on Si(001) surface
- Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
- Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
- Optimization of the Body Bias Voltage Set (BBVS) for Flex Power FPGA(Reconfigurable Device and Design Tools,Reconfigurable Systems)
- Preliminary Evaluation of Flex Power FPGA : A Power Reconfigurable Architecture with Fine Granularity(Recornfigurable Systems)(Reconfigurable Systems)
- A case of Wegener's granulomatosis complicated with seropneumothorax
- Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process
- Investigation of Thermal Annealing Process of GaN Layer on Sapphire by Molecular Dynamics
- Investigation of Initial Growth Process of GaN Film on Sapphire Using Computational Chemistry
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Investigation of Growth Process of GaN Film on Sapphire by Computational Chemistry
- Computational Studies on GaN Surface Polarity and InN/GaN Heterostructures by Density Functional Theory and Molecular Dynamics
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Planarization of Film Deposition and Improvement of Channel Structure for Fabrication of Anti-Resonant Reflecting Optical Waveguide Type X-crossing Vertical Coupler Filter
- Sidelobe Suppression of Vertical Coupler Filter with an X-Crossing Configuration
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- High-Density Recording Mechanism of Magnetooptieal Disks
- Evaluation of the Si-SiO_2 Interface by the Measurement of the Surface Recombination Velocity S by the Dual-Mercury Probe Method
- A Low-Voltatge Alterable Metal-Oxide-Nitride-Oxide-Semiconductor Memory with Nano-Meter Thick Gate Insulators (NM-MONOS) : LATE NEWS
- Measurement of the Minority-Carrier Lifetime in a Semiconductor Wafer by a Two-Mercury-Probe Method and Its Application to Evaluation of the Surface Recombination Velocity
- MCP-1 and MIP-1A Gene Polymorphisms in Japanese Patients with Sarcoidosis
- Tracheo-bronchitis Associated with Crohn's Disease Improved on Inhaled Corticotherapy
- Programmable Conductivity of Silicon Nanowires with Side Gates by Surface Charging
- Mechanism of Tungsten Plug Corrosion during Chemical Stripping Process : Scanning Maxwell-Stress Microscopy and Electrochemical Potentiometry Studies
- Investigation of low-energy tilted ion implantation for fin-type double-gate metal-oxide-semiconductor field-effect transistor extension doping (Special issue: Solid state devices and materials)
- Dual-metal-gate transistors with symmetrical threshold voltages using work-function-tuned Ta/Mo bilayer metal gates (Special issue: Solid state devices and materials)
- Ta/Mo stack dual metal gate technology applicable to gate-first processes (Special issue: Solid state devices and materials)
- Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
- Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
- A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
- Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
- Medical Students Provide Volunteer Services Following the Chuetsu-Oki Earthquake
- Characteristics of Three-μm-Thick Silicon Solar Cells Using Bonded Silicon-on-Insulator Wafer
- Surface Passivation of Thin Silicon Solar Cells Using Silicon-on-Insulator Wafer
- Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Interface Reaction of a Silicon Substrate and Lanthanum Oxide Films Depositedby Metalorganic Chemical Vapor Deposition : Semiconductors
- Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
- Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
- Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
- A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
- Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
- High-Frequency Precise Characterization of Intrinsic FinFET Channel
- A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
- Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate
- Device Design Consideration for $V_{\text{th}}$-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
- Dual-Metal-Gate Transistors with Symmetrical Threshold Voltages Using Work-Function-Tuned Ta/Mo Bilayer Metal Gates
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
- P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
- Demonstration and Analysis of Accumulation-Mode Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
- A Novel Process for Fabrication of Gated Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching
- Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
- 1/f Noise Characteristics of Fin-Type Field-Effect Transistors in Saturation Region
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
- Programmable Conductivity of Silicon Nanowires with Side Gates by Surface Charging
- Electrical Properties of Ruthenium/Metalorganic Chemical Vapor Deposited La-Oxide/Si Field Effect Transistors
- Independent-Double-Gate FinFET SRAM Technology
- Atomic Layer Deposition of SiO
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)
- Atomic Layer Deposition of SiO₂ for the Performance Enhancement of Fin Field Effect Transistors