Atomic Layer Deposition of SiO
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概要
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Atomic layer deposition (ALD) of SiO<inf>2</inf>by using a tetraethoxysilane (TEOS) or a bis(ethylmethylamino)silane (BEMAS) have been studied for the side-wall spacer formation of the fin field effect transistor (FinFET). The ALD-SiO<inf>2</inf>can be deposited conformally at 50 °C for the TEOS and at 250 °C for the BEMAS precursor. As a result, FinFETs with a 25-nm-long extension of the source/drain using the ALD grown SiO<inf>2</inf>sidewall spacer have been successfully fabricated. The performance of the FinFET has been successfully improved by reduction of the parasitic resistance.
- 2013-11-25
著者
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Ishikawa Yuki
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Yamauchi Hiromi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Sakamoto Kunihiro
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Masahara Meishoku
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Liu Yongxun
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tsukada Junichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Matsukawa Takashi
Nanoelectronics Research Institute Aist
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Endo Kazuhiko
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Endo Kazuhiko
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Yamauchi Hiromi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Tsukada Junichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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