Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
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概要
- 論文の詳細を見る
A novel process to fabricate a vertical double-gate (DG) metal-oxide-semiconductor field-effect-transistor (MOSFET) has been proposed. The etch rate of ion-beam exposed Si in a tetramethylammonium hydroxide (TMAH) solution was found to be significantly retarded. By utilizing this phenomenon and the orientation-dependent etching of the Si with a TMAH solution, a 16-nm-thick Si wall for a vertical channel of the DG MOSFET was successfully fabricated on the bulk Si substrate. By applying the etchback process, symmetrical poly-Si DG was formed on each side of the Si wall. A drain contact hole was opened self-aligned to the Si wall by combining a planarization and an etchback process with an electron-beam resist.
- 2003-06-15
著者
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Sakamoto Kunihiro
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Masahara Meishoku
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Suzuki Eiichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Liu Yongxun
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanoue Hisao
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Matsukawa Takashi
Nanoelectronics Research Institute Aist
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Ishii Kenichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Sakamoto Kunihiro
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Liu Yongxun
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Matsukawa Takashi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Suzuki Eiichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ishii Kenichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Kanemaru Seigo
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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