Development of Thin-Film Bending Technique Induced by Ion-Beam Irradiation
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概要
- 論文の詳細を見る
We propose a thin-film bending technique induced by ion-beam irradiation, which allows for the fabrication of three-dimensional device structures and arrays, such as micro-electro mechanical systems (MEMS) devices. It can be applied to a wide range of materials deposited by non-specialized sputtering methods under a variety of conditions. It was found that the bending angle could be controlled by the depth of ion implantation, irrespective of the ion species or the film material. Using this technique, micron-sized regions of vertically standing thin film tens of nanometers thick could be produced.
- Japan Society of Applied Physicsの論文
- 2009-06-25
著者
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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NAGAO Masayoshi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Nagao Masayoshi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Yoshida Tomoya
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Yoshida Tomoya
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Nagao Masayoshi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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