General Analytical Relationship for Electric Field of Gated Field Emitters
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概要
- 論文の詳細を見る
Current–voltage $I(V)$ measurements are used for the characterization of metallic Spindt-type and Si gated emitters, in conjunction with the Fowler–Nordheim (FN) current density–electric field $J(E)$ relationship describing the local tunneling process. For proper device modeling, the electric field on the emitter should be linked to the applied voltage. A general analytical relationship for computing the electric field on the emitter apex for planar and volcano-shaped gated emitters has been derived. The relationship is valid for a wide range of the parameters, taking into account the emitter radius and cone angle as well as the gate aperture radius. An example of device modeling concerning HfC-coated poly-Si gated emitters is presented.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-06-15
著者
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Filip Valeriu
Universiiy Of Buchareg Faculty Of Physics
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Filip V
Univ. Bucharest Bucharest‐magurele Rom
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Kanemaru S
Aist Ibaraki Jpn
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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Kanemaru Seigo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru Seigo
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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NAGAO Masayoshi
National Institute of Advanced Industrial Science and Technology
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KANEMARU Seigo
National Institute of Advanced Industrial Science and Technology
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Itoh J
Aist Ibaraki Jpn
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Itoh J
Nanoelectronics Research Institute Aist
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Itoh Junji
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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Nagao M
Laboratory Of Biosignals And Response Department Of Applied Molecular Biology Kyoto University
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Nagao M
National Institute For Materials Science
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ITOH Junji
National Institute of Advanced Industrial Science and Technology
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Nicolaescu Dan
National Institute of Advanced Industrial Science & Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibara
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Filip Valeriu
Faculty of Physics, University of Bucharest, P. O. Box MG-11, Bucharest-Magurele 76900, Romania
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Nicolaescu D.
Nanoelectronics Research Institute Aist
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Nagao Masayoshi
National Institute of Advanced Industrial Science & Technology (AIST)
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Itoh Junji
National Institute of Advanced Industrial Science & Technology (AIST)
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Filip Valeriu
Faculty of Physics, University of Bucharest
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Kanemaru Seigo
National Institute of Advanced Industrial Science & Technology (AIST)
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